Cargando…

A 2D Bismuth-Induced Honeycomb Surface Structure on GaAs(111)

[Image: see text] Two-dimensional (2D) topological insulators have fascinating physical properties which are promising for applications within spintronics. In order to realize spintronic devices working at room temperature, materials with a large nontrivial gap are needed. Bismuthene, a 2D layer of...

Descripción completa

Detalles Bibliográficos
Autores principales:	Liu, Yi, Benter, Sandra, Ong, Chin Shen, Maciel, Renan P., Björk, Linnéa, Irish, Austin, Eriksson, Olle, Mikkelsen, Anders, Timm, Rainer
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2023
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10018767/ https://www.ncbi.nlm.nih.gov/pubmed/36821844 http://dx.doi.org/10.1021/acsnano.2c12863

Ejemplares similares

Tuneable 2D surface Bismuth incorporation on InAs nanosheets
por: Benter, Sandra, et al.
Publicado: (2023)

Bismuth incorporation and the role of ordering in GaAsBi/GaAs structures
por: Reyes, Daniel F, et al.
Publicado: (2014)

Nucleation of Ga droplets self-assembly on GaAs(111)A substrates
por: Tuktamyshev, Artur, et al.
Publicado: (2021)

Photovoltaic Properties of p-Doped GaAs Nanowire Arrays Grown on n-Type GaAs(111)B Substrate
por: Cirlin, GE, et al.
Publicado: (2009)

Self-selective formation of ordered 1D and 2D GaBi structures on wurtzite GaAs nanowire surfaces
por: Liu, Yi, et al.
Publicado: (2021)

Strain Relaxation in GaSb/GaAs(111)A Heteroepitaxy Using Thin InAs Interlayers
por: Ohtake, Akihiro, et al.
Publicado: (2018)

Atomic structure and passivated nature of the Se-treated GaAs(111)B surface
por: Ohtake, Akihiro, et al.
Publicado: (2018)

Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires
por: Monaico, Elena I, et al.
Publicado: (2020)

Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A
por: Tuktamyshev, Artur, et al.
Publicado: (2020)

Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111)
por: Vettori, Marco, et al.
Publicado: (2019)

Annual GaAs Integrated Circuits Symposium : GaAs IC
por: Madihian, M, et al.
Publicado: (1996)

GaAs detectors
por: Beaumont, S P, et al.
Publicado: (1990)

From the nucleation of wiggling Au nanostructures to the dome-shaped Au droplets on GaAs (111)A, (110), (100), and (111)B
por: Li, Ming-Yu, et al.
Publicado: (2014)

Effect of Si(111) Surface Modification by Ga Focused Ion Beam at 30 kV on GaAs Nanowire Growth
por: Shandyba, Nikita, et al.
Publicado: (2022)

Effect of Au thickness on the evolution of self-assembled Au droplets on GaAs (111)A and (100)
por: Li, Ming-Yu, et al.
Publicado: (2014)

Electronic and optical properties of silicene on GaAs(111) with hydrogen intercalation: a first-principles study
por: Yu, Ting, et al.
Publicado: (2021)

Effects of Annealing on GaAs/GaAsSbN/GaAs Core-Multi-shell Nanowires
por: Kasanaboina, Pavan, et al.
Publicado: (2016)

Dynamics of Optically-Generated Carriers in Si (100) and Si (111) Substrate-Grown GaAs/AlGaAs Core-Shell Nanowires
por: delos Santos, Ramon, et al.
Publicado: (2015)

GaAs detector status
por: Smith, K M
Publicado: (1996)

Lattice parameter accommodation between GaAs(111) nanowires and Si(111) substrate after growth via Au-assisted molecular beam epitaxy
por: Davydok, Anton, et al.
Publicado: (2012)

Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs
por: Sadofyev, Yuri G., et al.
Publicado: (2010)

Effects of thermal annealing on localization and strain in core/multishell GaAs/GaNAs/GaAs nanowires
por: Balagula, Roman M., et al.
Publicado: (2020)

18th Annual IEEE GaAs Integrated Circuits Symposium - GaAs IC
por: Müller, J E, et al.
Publicado: (1997)

Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration
por: Petrushkov, Mikhail O., et al.
Publicado: (2022)

Optimization of GaAs Nanowire Pin Junction Array Solar Cells by Using AlGaAs/GaAs Heterojunctions
por: Wu, Yao, et al.
Publicado: (2018)

Alloy formation during molecular beam epitaxy growth of Si-doped InAs nanowires on GaAs[111]B
por: Davydok, Anton, et al.
Publicado: (2013)

Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates
por: Bietti, Sergio, et al.
Publicado: (2015)

Single-Crystal Y(2)O(3) Epitaxially on GaAs(001) and (111) Using Atomic Layer Deposition
por: Lin, Y. H., et al.
Publicado: (2015)

Electrical and Optical Properties of Au-Catalyzed GaAs Nanowires Grown on Si (111) Substrate by Molecular Beam Epitaxy
por: Wang, Chiu-Yen, et al.
Publicado: (2017)

Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates
por: Tuktamyshev, Artur, et al.
Publicado: (2019)

Circular Photogalvanic Current in Ni-Doped Cd(3)As(2) Films Epitaxied on GaAs(111)B Substrate
por: Liang, Gaoming, et al.
Publicado: (2023)

Topologically nontrivial bismuth(111) thin films
por: Yao, Meng-Yu, et al.
Publicado: (2016)

Lattice location of Mn in GaAs and GaN
por: De Coster, Arnaud
Publicado: (2015)

Lattice location of Mn in GaAs and GaN
por: De Coster, Arnaud
Publicado: (2017)

Implantation and diffusion of $^{73}$As in GaAs and GaP
por: Bösker, G, et al.
Publicado: (2000)

Optical characteristics of GaAs/GaAsSb/GaAs coaxial single quantum-well nanowires with different Sb components
por: Li, Haolin, et al.
Publicado: (2019)

Polymer Brushes on GaAs and GaAs/AlGaAs Nanoheterostructures: A Promising Platform for Attractive Detection of Legionella pneumophila
por: Chawich, Juliana, et al.
Publicado: (2022)

Diffusion of $^{52}$Mn in GaAs
por: Räasänen, J, et al.
Publicado: (2004)

Characterization of inactive carbon in GaAs
por: Moll, A J, et al.
Publicado: (1994)

Recent results on GaAs detectors
por: Bates, R L, et al.
Publicado: (1997)

Cannot write session to /tmp/vufind_sessions/sess_k1qc948s81s4tbuvmvck7qmfsg