Anisotropy of impact ionization in WSe(2) field effect transistors

Carrier multiplication via impact ionization in two-dimensional (2D) layered materials is a very promising process for manufacturing high-performance devices because the multiplication has been reported to overcome thermodynamic conversion limits. Given that 2D layered materials exhibit highly aniso...

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Detalles Bibliográficos
Autores principales: Kang, Taeho, Choi, Haeju, Li, Jinshu, Kang, Chanwoo, Hwang, Euyheon, Lee, Sungjoo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Nature Singapore 2023
Materias:
Full Paper
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10023822/
https://www.ncbi.nlm.nih.gov/pubmed/36932269
http://dx.doi.org/10.1186/s40580-023-00361-x

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10023822/
https://www.ncbi.nlm.nih.gov/pubmed/36932269
http://dx.doi.org/10.1186/s40580-023-00361-x

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