Cargando…

Giant piezoresistivity in a van der Waals material induced by intralayer atomic motions

The presence of the van der Waals gap in layered materials creates a wealth of intriguing phenomena different to their counterparts in conventional materials. For example, pressurization can generate a large anisotropic lattice shrinkage along the stacking orientation and/or a significant interlayer...

Descripción completa

Detalles Bibliográficos
Autores principales: Tang, Lingyun, Mao, Zhongquan, Wang, Chutian, Fu, Qi, Wang, Chen, Zhang, Yichi, Shen, Jingyi, Yin, Yuefeng, Shen, Bin, Tan, Dayong, Li, Qian, Wang, Yonggang, Medhekar, Nikhil V., Wu, Jie, Yuan, Huiqiu, Li, Yanchun, Fuhrer, Michael S., Zheng, Changxi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10024745/
https://www.ncbi.nlm.nih.gov/pubmed/36934098
http://dx.doi.org/10.1038/s41467-023-37239-9
_version_ 1784909174491054080
author Tang, Lingyun
Mao, Zhongquan
Wang, Chutian
Fu, Qi
Wang, Chen
Zhang, Yichi
Shen, Jingyi
Yin, Yuefeng
Shen, Bin
Tan, Dayong
Li, Qian
Wang, Yonggang
Medhekar, Nikhil V.
Wu, Jie
Yuan, Huiqiu
Li, Yanchun
Fuhrer, Michael S.
Zheng, Changxi
author_facet Tang, Lingyun
Mao, Zhongquan
Wang, Chutian
Fu, Qi
Wang, Chen
Zhang, Yichi
Shen, Jingyi
Yin, Yuefeng
Shen, Bin
Tan, Dayong
Li, Qian
Wang, Yonggang
Medhekar, Nikhil V.
Wu, Jie
Yuan, Huiqiu
Li, Yanchun
Fuhrer, Michael S.
Zheng, Changxi
author_sort Tang, Lingyun
collection PubMed
description The presence of the van der Waals gap in layered materials creates a wealth of intriguing phenomena different to their counterparts in conventional materials. For example, pressurization can generate a large anisotropic lattice shrinkage along the stacking orientation and/or a significant interlayer sliding, and many of the exotic pressure-dependent properties derive from these mechanisms. Here we report a giant piezoresistivity in pressurized β′-In(2)Se(3). Upon compression, a six-orders-of-magnitude drop of electrical resistivity is obtained below 1.2 GPa in β′-In(2)Se(3) flakes, yielding a giant piezoresistive gauge π(p) of −5.33 GPa(−1). Simultaneously, the sample undergoes a semiconductor-to-semimetal transition without a structural phase transition. Surprisingly, linear dichroism study and theoretical first principles modelling show that these phenomena arise not due to shrinkage or sliding at the van der Waals gap, but rather are dominated by the layer-dependent atomic motions inside the quintuple layer, mainly from the shifting of middle Se atoms to their high-symmetric location. The atomic motions link to both the band structure modulation and the in-plane ferroelectric dipoles. Our work not only provides a prominent piezoresistive material but also points out the importance of intralayer atomic motions beyond van der Waals gap.
format Online
Article
Text
id pubmed-10024745
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-100247452023-03-20 Giant piezoresistivity in a van der Waals material induced by intralayer atomic motions Tang, Lingyun Mao, Zhongquan Wang, Chutian Fu, Qi Wang, Chen Zhang, Yichi Shen, Jingyi Yin, Yuefeng Shen, Bin Tan, Dayong Li, Qian Wang, Yonggang Medhekar, Nikhil V. Wu, Jie Yuan, Huiqiu Li, Yanchun Fuhrer, Michael S. Zheng, Changxi Nat Commun Article The presence of the van der Waals gap in layered materials creates a wealth of intriguing phenomena different to their counterparts in conventional materials. For example, pressurization can generate a large anisotropic lattice shrinkage along the stacking orientation and/or a significant interlayer sliding, and many of the exotic pressure-dependent properties derive from these mechanisms. Here we report a giant piezoresistivity in pressurized β′-In(2)Se(3). Upon compression, a six-orders-of-magnitude drop of electrical resistivity is obtained below 1.2 GPa in β′-In(2)Se(3) flakes, yielding a giant piezoresistive gauge π(p) of −5.33 GPa(−1). Simultaneously, the sample undergoes a semiconductor-to-semimetal transition without a structural phase transition. Surprisingly, linear dichroism study and theoretical first principles modelling show that these phenomena arise not due to shrinkage or sliding at the van der Waals gap, but rather are dominated by the layer-dependent atomic motions inside the quintuple layer, mainly from the shifting of middle Se atoms to their high-symmetric location. The atomic motions link to both the band structure modulation and the in-plane ferroelectric dipoles. Our work not only provides a prominent piezoresistive material but also points out the importance of intralayer atomic motions beyond van der Waals gap. Nature Publishing Group UK 2023-03-18 /pmc/articles/PMC10024745/ /pubmed/36934098 http://dx.doi.org/10.1038/s41467-023-37239-9 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Tang, Lingyun
Mao, Zhongquan
Wang, Chutian
Fu, Qi
Wang, Chen
Zhang, Yichi
Shen, Jingyi
Yin, Yuefeng
Shen, Bin
Tan, Dayong
Li, Qian
Wang, Yonggang
Medhekar, Nikhil V.
Wu, Jie
Yuan, Huiqiu
Li, Yanchun
Fuhrer, Michael S.
Zheng, Changxi
Giant piezoresistivity in a van der Waals material induced by intralayer atomic motions
title Giant piezoresistivity in a van der Waals material induced by intralayer atomic motions
title_full Giant piezoresistivity in a van der Waals material induced by intralayer atomic motions
title_fullStr Giant piezoresistivity in a van der Waals material induced by intralayer atomic motions
title_full_unstemmed Giant piezoresistivity in a van der Waals material induced by intralayer atomic motions
title_short Giant piezoresistivity in a van der Waals material induced by intralayer atomic motions
title_sort giant piezoresistivity in a van der waals material induced by intralayer atomic motions
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10024745/
https://www.ncbi.nlm.nih.gov/pubmed/36934098
http://dx.doi.org/10.1038/s41467-023-37239-9
work_keys_str_mv AT tanglingyun giantpiezoresistivityinavanderwaalsmaterialinducedbyintralayeratomicmotions
AT maozhongquan giantpiezoresistivityinavanderwaalsmaterialinducedbyintralayeratomicmotions
AT wangchutian giantpiezoresistivityinavanderwaalsmaterialinducedbyintralayeratomicmotions
AT fuqi giantpiezoresistivityinavanderwaalsmaterialinducedbyintralayeratomicmotions
AT wangchen giantpiezoresistivityinavanderwaalsmaterialinducedbyintralayeratomicmotions
AT zhangyichi giantpiezoresistivityinavanderwaalsmaterialinducedbyintralayeratomicmotions
AT shenjingyi giantpiezoresistivityinavanderwaalsmaterialinducedbyintralayeratomicmotions
AT yinyuefeng giantpiezoresistivityinavanderwaalsmaterialinducedbyintralayeratomicmotions
AT shenbin giantpiezoresistivityinavanderwaalsmaterialinducedbyintralayeratomicmotions
AT tandayong giantpiezoresistivityinavanderwaalsmaterialinducedbyintralayeratomicmotions
AT liqian giantpiezoresistivityinavanderwaalsmaterialinducedbyintralayeratomicmotions
AT wangyonggang giantpiezoresistivityinavanderwaalsmaterialinducedbyintralayeratomicmotions
AT medhekarnikhilv giantpiezoresistivityinavanderwaalsmaterialinducedbyintralayeratomicmotions
AT wujie giantpiezoresistivityinavanderwaalsmaterialinducedbyintralayeratomicmotions
AT yuanhuiqiu giantpiezoresistivityinavanderwaalsmaterialinducedbyintralayeratomicmotions
AT liyanchun giantpiezoresistivityinavanderwaalsmaterialinducedbyintralayeratomicmotions
AT fuhrermichaels giantpiezoresistivityinavanderwaalsmaterialinducedbyintralayeratomicmotions
AT zhengchangxi giantpiezoresistivityinavanderwaalsmaterialinducedbyintralayeratomicmotions