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Performance simulation of solar cell based on AZO/CdTe heterostructure by SCAPS 1D software

Simulation and analysis of solar cells based on the heterojunction of zinc oxide doped with aluminum (AZO) and cadmium telluride (CdTe) with the structure (Al/AZO/CdTe/NiO/Ni) using the Simulator of the capacitance of solar cells - 1 dimension (SCAPS-1D) has been presented in this paper. AZO is used...

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Detalles Bibliográficos
Autores principales: Zepeda Medina, José Carlos, Rosendo Andrés, Enrique, Morales Ruíz, Crisóforo, Camacho Espinosa, Eduardo, Treviño Yarce, Leticia, Galeazzi Isasmendi, Reina, Romano Trujillo, Román, García Salgado, Godofredo, Coyopol Solis, Antonio, Nieto Caballero, Fabiola Gabriela, Carranza Sanchez, Ana Cristina
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10034444/
https://www.ncbi.nlm.nih.gov/pubmed/36967952
http://dx.doi.org/10.1016/j.heliyon.2023.e14547
Descripción
Sumario:Simulation and analysis of solar cells based on the heterojunction of zinc oxide doped with aluminum (AZO) and cadmium telluride (CdTe) with the structure (Al/AZO/CdTe/NiO/Ni) using the Simulator of the capacitance of solar cells - 1 dimension (SCAPS-1D) has been presented in this paper. AZO is used as a window layer and Nickel oxide (NiO) has been introduced as a hole transport layer (HTL). Through the software, the effect of thickness, absorber (CdTe), and window (AZO) layers carrier concentration, operating temperature, and resistances (series and shunt) have been studied. Simulation results show that the solar cell performance can be greatly improved by adjusting the layer's thickness and carrier concentration, obtaining optimal values of 10 nm and [Formula: see text] for the AZO layer, while for the CdTe layer they were 2 μm and [Formula: see text]. The optimum series and shunt resistances are in the range of 1–3 [Formula: see text] and 1800–2200 [Formula: see text] respectively. A maximum power conversion efficiency (PCE) of 14.2% is achieved with an open circuit voltage (Voc) of 0.74 V, short circuit current density (Jsc) of 26.15 [Formula: see text] and a fill factor (FF) of 72.83%, this shows AZO potential to be considered as an interesting material to replace CdS window layer.