WS(2) Transistors with Sulfur Atoms Being Replaced at the Interface: First-Principles Quantum-Transport Study

[Image: see text] Reducing the contact resistance is one of the major challenges in developing transistors based on two-dimensional materials. In this study, we perform first-principles quantum-transport calculations by adopting a novel type of partially sulfur-replaced edge contact metal/WSX/WS(2)...

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Detalles Bibliográficos
Autores principales: Chung, Chih-Hung, Chen, Hong-Ren, Ho, Meng-Ju, Lin, Chiung-Yuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10034831/
https://www.ncbi.nlm.nih.gov/pubmed/36969417
http://dx.doi.org/10.1021/acsomega.2c08275

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10034831/
https://www.ncbi.nlm.nih.gov/pubmed/36969417
http://dx.doi.org/10.1021/acsomega.2c08275

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