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WS(2) Transistors with Sulfur Atoms Being Replaced at the Interface: First-Principles Quantum-Transport Study
[Image: see text] Reducing the contact resistance is one of the major challenges in developing transistors based on two-dimensional materials. In this study, we perform first-principles quantum-transport calculations by adopting a novel type of partially sulfur-replaced edge contact metal/WSX/WS(2)...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10034831/ https://www.ncbi.nlm.nih.gov/pubmed/36969417 http://dx.doi.org/10.1021/acsomega.2c08275 |