Role of Chalcogen Defect Introducing Metal-Induced Gap States and Its Implications for Metal–TMDs’ Interface Chemistry

[Image: see text] The contact resistance of the transition metal dichalcogenide (TMD) devices is not comparable to that of their silicon counterparts, probably due to a lack of clarity in their interface chemistry. Looking beyond the conventional Schottky–Mott rule, the metal chalcogen orbital overl...

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Detalles Bibliográficos
Autores principales: Kumar, Jeevesh, Shrivastava, Mayank
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10034985/
https://www.ncbi.nlm.nih.gov/pubmed/36969396
http://dx.doi.org/10.1021/acsomega.2c07489

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10034985/
https://www.ncbi.nlm.nih.gov/pubmed/36969396
http://dx.doi.org/10.1021/acsomega.2c07489

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