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Role of Chalcogen Defect Introducing Metal-Induced Gap States and Its Implications for Metal–TMDs’ Interface Chemistry
[Image: see text] The contact resistance of the transition metal dichalcogenide (TMD) devices is not comparable to that of their silicon counterparts, probably due to a lack of clarity in their interface chemistry. Looking beyond the conventional Schottky–Mott rule, the metal chalcogen orbital overl...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10034985/ https://www.ncbi.nlm.nih.gov/pubmed/36969396 http://dx.doi.org/10.1021/acsomega.2c07489 |