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Water-based 2-dimensional anatase TiO(2) inks for printed diodes and transistors

2-Dimensional (2D) materials are attracting strong interest in printed electronics because of their unique properties and easy processability, enabling the fabrication of devices with low cost and mass scalable methods such as inkjet printing. For the fabrication of fully printed devices, it is of f...

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Detalles Bibliográficos
Autores principales: Kassem, Omar, Pimpolari, Lorenzo, Dun, Chaochao, Polyushkin, Dmitry K., Zarattini, Marco, Dimaggio, Elisabetta, Chen, Liming, Basso, Giovanni, Parenti, Federico, Urban, Jeffrey J., Mueller, Thomas, Fiori, Gianluca, Casiraghi, Cinzia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10035403/
https://www.ncbi.nlm.nih.gov/pubmed/36880645
http://dx.doi.org/10.1039/d2nr05786g
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author Kassem, Omar
Pimpolari, Lorenzo
Dun, Chaochao
Polyushkin, Dmitry K.
Zarattini, Marco
Dimaggio, Elisabetta
Chen, Liming
Basso, Giovanni
Parenti, Federico
Urban, Jeffrey J.
Mueller, Thomas
Fiori, Gianluca
Casiraghi, Cinzia
author_facet Kassem, Omar
Pimpolari, Lorenzo
Dun, Chaochao
Polyushkin, Dmitry K.
Zarattini, Marco
Dimaggio, Elisabetta
Chen, Liming
Basso, Giovanni
Parenti, Federico
Urban, Jeffrey J.
Mueller, Thomas
Fiori, Gianluca
Casiraghi, Cinzia
author_sort Kassem, Omar
collection PubMed
description 2-Dimensional (2D) materials are attracting strong interest in printed electronics because of their unique properties and easy processability, enabling the fabrication of devices with low cost and mass scalable methods such as inkjet printing. For the fabrication of fully printed devices, it is of fundamental importance to develop a printable dielectric ink, providing good insulation and the ability to withstand large electric fields. Hexagonal boron nitride (h-BN) is typically used as a dielectric in printed devices. However, the h-BN film thickness is usually above 1 μm, hence limiting the use of h-BN in low-voltage applications. Furthermore, the h-BN ink is composed of nanosheets with broad lateral size and thickness distributions, due to the use of liquid-phase exfoliation (LPE). In this work, we investigate anatase TiO(2) nanosheets (TiO(2)-NS), produced by a mass scalable bottom-up approach. We formulate the TiO(2)-NS into a water-based and printable solvent and demonstrate the use of the material with sub-micron thickness in printed diodes and transistors, hence validating the strong potential of TiO(2)-NS as a dielectric for printed electronics.
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spelling pubmed-100354032023-03-24 Water-based 2-dimensional anatase TiO(2) inks for printed diodes and transistors Kassem, Omar Pimpolari, Lorenzo Dun, Chaochao Polyushkin, Dmitry K. Zarattini, Marco Dimaggio, Elisabetta Chen, Liming Basso, Giovanni Parenti, Federico Urban, Jeffrey J. Mueller, Thomas Fiori, Gianluca Casiraghi, Cinzia Nanoscale Chemistry 2-Dimensional (2D) materials are attracting strong interest in printed electronics because of their unique properties and easy processability, enabling the fabrication of devices with low cost and mass scalable methods such as inkjet printing. For the fabrication of fully printed devices, it is of fundamental importance to develop a printable dielectric ink, providing good insulation and the ability to withstand large electric fields. Hexagonal boron nitride (h-BN) is typically used as a dielectric in printed devices. However, the h-BN film thickness is usually above 1 μm, hence limiting the use of h-BN in low-voltage applications. Furthermore, the h-BN ink is composed of nanosheets with broad lateral size and thickness distributions, due to the use of liquid-phase exfoliation (LPE). In this work, we investigate anatase TiO(2) nanosheets (TiO(2)-NS), produced by a mass scalable bottom-up approach. We formulate the TiO(2)-NS into a water-based and printable solvent and demonstrate the use of the material with sub-micron thickness in printed diodes and transistors, hence validating the strong potential of TiO(2)-NS as a dielectric for printed electronics. The Royal Society of Chemistry 2023-02-16 /pmc/articles/PMC10035403/ /pubmed/36880645 http://dx.doi.org/10.1039/d2nr05786g Text en This journal is © The Royal Society of Chemistry https://creativecommons.org/licenses/by-nc/3.0/
spellingShingle Chemistry
Kassem, Omar
Pimpolari, Lorenzo
Dun, Chaochao
Polyushkin, Dmitry K.
Zarattini, Marco
Dimaggio, Elisabetta
Chen, Liming
Basso, Giovanni
Parenti, Federico
Urban, Jeffrey J.
Mueller, Thomas
Fiori, Gianluca
Casiraghi, Cinzia
Water-based 2-dimensional anatase TiO(2) inks for printed diodes and transistors
title Water-based 2-dimensional anatase TiO(2) inks for printed diodes and transistors
title_full Water-based 2-dimensional anatase TiO(2) inks for printed diodes and transistors
title_fullStr Water-based 2-dimensional anatase TiO(2) inks for printed diodes and transistors
title_full_unstemmed Water-based 2-dimensional anatase TiO(2) inks for printed diodes and transistors
title_short Water-based 2-dimensional anatase TiO(2) inks for printed diodes and transistors
title_sort water-based 2-dimensional anatase tio(2) inks for printed diodes and transistors
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10035403/
https://www.ncbi.nlm.nih.gov/pubmed/36880645
http://dx.doi.org/10.1039/d2nr05786g
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