Unraveling the importance of fabrication parameters of copper oxide-based resistive switching memory devices by machine learning techniques

In the present study, various statistical and machine learning (ML) techniques were used to understand how device fabrication parameters affect the performance of copper oxide-based resistive switching (RS) devices. In the present case, the data was collected from copper oxide RS devices-based resea...

Descripción completa

Detalles Bibliográficos
Autores principales: Patil, Suvarna M., Kundale, Somnath S., Sutar, Santosh S., Patil, Pramod J., Teli, Aviraj M., Beknalkar, Sonali A., Kamat, Rajanish K., Bae, Jinho, Shin, Jae Cheol, Dongale, Tukaram D.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10039863/
https://www.ncbi.nlm.nih.gov/pubmed/36966189
http://dx.doi.org/10.1038/s41598-023-32173-8

Ejemplares similares

Ejemplares similares