The use of remote Femto Second technology in the preparation of black silicon material and optical devices

The research aims to study the application of remote Femto Second (FS) technology in black silicon material preparation and optical devices. Based on the principle and characteristic research of FS technology, the interaction between FS and silicon is adopted to propose a scheme for preparing black silicon material through experiments. Moreover, the experimental parameters are optimized. Then, the scheme of using the FS for etching polymer optical power splitter as a new technical means is proposed. In addition, while ensuring processing accuracy, the appropriate process parameters of laser etching photoresist are obtained. The results show that the performance of black silicon prepared with SF(6) as the background gas is greatly improved in the 400-2200nm range. However, the performance of black silicon samples with the two-layer structure etched at different laser energy densities has little difference. Black silicon with a Se+Si two-layer film structure has the best optical absorption performance in the infrared range of 1100nm-2200nm. Besides, the optical absorption rate is the highest when the laser scanning rate is 0.5mm/s. In the band of >1100nm, when the maximum laser energy density is 6.5kJ/m2, the overall absorption of the etched sample is the worst. The absorption rate is the best when the laser energy density is 3.9kJ/m2. It suggests that the proper parameter selection greatly impacts the quality of the final laser-etched sample.