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Epitaxial growth of crystal phase quantum dots in III–V semiconductor nanowires

Crystal phase quantum dots (QDs) are formed during the axial growth of III–V semiconductor nanowires (NWs) by stacking different crystal phases of the same material. In III–V semiconductor NWs, both zinc blende (ZB) and wurtzite (WZ) crystal phases can coexist. The band structure difference between...

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Detalles Bibliográficos
Autores principales: Lozano, Miguel Sinusia, Gómez, Víctor J.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10044505/
https://www.ncbi.nlm.nih.gov/pubmed/36998660
http://dx.doi.org/10.1039/d2na00956k