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Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfO(x)N(y)) Thin Films

This work demonstrated the optimization of HiPIMS reactive magnetron sputtering of hafnium oxynitride (HfO(x)N(y)) thin films. During the optimization procedure, employing Taguchi orthogonal tables, the parameters of examined dielectric films were explored, utilizing optical methods (spectroscopic e...

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Autores principales: Puźniak, Mirosław, Gajewski, Wojciech, Seweryn, Aleksandra, Klepka, Marcin T., Witkowski, Bartłomiej S., Godlewski, Marek, Mroczyński, Robert
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10051222/
https://www.ncbi.nlm.nih.gov/pubmed/36984417
http://dx.doi.org/10.3390/ma16062539
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author Puźniak, Mirosław
Gajewski, Wojciech
Seweryn, Aleksandra
Klepka, Marcin T.
Witkowski, Bartłomiej S.
Godlewski, Marek
Mroczyński, Robert
author_facet Puźniak, Mirosław
Gajewski, Wojciech
Seweryn, Aleksandra
Klepka, Marcin T.
Witkowski, Bartłomiej S.
Godlewski, Marek
Mroczyński, Robert
author_sort Puźniak, Mirosław
collection PubMed
description This work demonstrated the optimization of HiPIMS reactive magnetron sputtering of hafnium oxynitride (HfO(x)N(y)) thin films. During the optimization procedure, employing Taguchi orthogonal tables, the parameters of examined dielectric films were explored, utilizing optical methods (spectroscopic ellipsometry and refractometry), electrical characterization (C-V, I-V measurements of MOS structures), and structural investigation (AFM, XRD, XPS). The thermal stability of fabricated HfO(x)N(y) layers, up to 800 °C, was also investigated. The presented results demonstrated the correctness of the optimization methodology. The results also demonstrated the significant stability of hafnia-based layers at up to 800 °C. No electrical parameters or surface morphology deteriorations were demonstrated. The structural analysis revealed comparable electrical properties and significantly greater immunity to high-temperature treatment in HfO(x)N(y) layers formed using HiPIMS, as compared to those formed using the standard pulsed magnetron sputtering technique. The results presented in this study confirmed that the investigated hafnium oxynitride films, fabricated through the HiPIMS process, could potentially be used as a thermally-stable gate dielectric in self-aligned MOS structures and devices.
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spelling pubmed-100512222023-03-30 Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfO(x)N(y)) Thin Films Puźniak, Mirosław Gajewski, Wojciech Seweryn, Aleksandra Klepka, Marcin T. Witkowski, Bartłomiej S. Godlewski, Marek Mroczyński, Robert Materials (Basel) Article This work demonstrated the optimization of HiPIMS reactive magnetron sputtering of hafnium oxynitride (HfO(x)N(y)) thin films. During the optimization procedure, employing Taguchi orthogonal tables, the parameters of examined dielectric films were explored, utilizing optical methods (spectroscopic ellipsometry and refractometry), electrical characterization (C-V, I-V measurements of MOS structures), and structural investigation (AFM, XRD, XPS). The thermal stability of fabricated HfO(x)N(y) layers, up to 800 °C, was also investigated. The presented results demonstrated the correctness of the optimization methodology. The results also demonstrated the significant stability of hafnia-based layers at up to 800 °C. No electrical parameters or surface morphology deteriorations were demonstrated. The structural analysis revealed comparable electrical properties and significantly greater immunity to high-temperature treatment in HfO(x)N(y) layers formed using HiPIMS, as compared to those formed using the standard pulsed magnetron sputtering technique. The results presented in this study confirmed that the investigated hafnium oxynitride films, fabricated through the HiPIMS process, could potentially be used as a thermally-stable gate dielectric in self-aligned MOS structures and devices. MDPI 2023-03-22 /pmc/articles/PMC10051222/ /pubmed/36984417 http://dx.doi.org/10.3390/ma16062539 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Puźniak, Mirosław
Gajewski, Wojciech
Seweryn, Aleksandra
Klepka, Marcin T.
Witkowski, Bartłomiej S.
Godlewski, Marek
Mroczyński, Robert
Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfO(x)N(y)) Thin Films
title Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfO(x)N(y)) Thin Films
title_full Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfO(x)N(y)) Thin Films
title_fullStr Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfO(x)N(y)) Thin Films
title_full_unstemmed Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfO(x)N(y)) Thin Films
title_short Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfO(x)N(y)) Thin Films
title_sort studies of electrical parameters and thermal stability of hipims hafnium oxynitride (hfo(x)n(y)) thin films
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10051222/
https://www.ncbi.nlm.nih.gov/pubmed/36984417
http://dx.doi.org/10.3390/ma16062539
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