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Modeling and Simulation Investigation of Ferroelectric-Based Electrostatic Doping for Tunnelling Field-Effect Transistor

In this paper, a novel ferroelectric-based electrostatic doping (Fe-ED) nanosheet tunneling field-effect transistor (TFET) is proposed and analyzed using technology computer-aided design (TCAD) Sentaurus simulation software. By inserting a ferroelectric film into the polarity gate, the electrons and...

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Detalles Bibliográficos
Autores principales:	Wang, Dong, Liu, Hongxia, Zhang, Hao, Cai, Ming, Lin, Jinfu
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10051887/ https://www.ncbi.nlm.nih.gov/pubmed/36985079 http://dx.doi.org/10.3390/mi14030672

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