Cargando…
Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode
Developing high-performance Si-based light-emitting devices is the key step to realizing all-Si-based optical telecommunication. Usually, silica (SiO(2)) as the host matrix is used to passivate silicon nanocrystals, and a strong quantum confinement effect can be observed due to the large band offset...
Autores principales: | , , , , , , , , |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10051929/ https://www.ncbi.nlm.nih.gov/pubmed/36986003 http://dx.doi.org/10.3390/nano13061109 |
_version_ | 1785015009390100480 |
---|---|
author | Sun, Teng Li, Dongke Chen, Jiaming Wang, Yuhao Han, Junnan Zhu, Ting Li, Wei Xu, Jun Chen, Kunji |
author_facet | Sun, Teng Li, Dongke Chen, Jiaming Wang, Yuhao Han, Junnan Zhu, Ting Li, Wei Xu, Jun Chen, Kunji |
author_sort | Sun, Teng |
collection | PubMed |
description | Developing high-performance Si-based light-emitting devices is the key step to realizing all-Si-based optical telecommunication. Usually, silica (SiO(2)) as the host matrix is used to passivate silicon nanocrystals, and a strong quantum confinement effect can be observed due to the large band offset between Si and SiO(2) (~8.9 eV). Here, for further development of device properties, we fabricate Si nanocrystals (NCs)/SiC multilayers and study the changes in photoelectric properties of the LEDs induced by P dopants. PL peaks centered at 500 nm, 650 nm and 800 nm can be detected, which are attributed to surface states between SiC and Si NCs, amorphous SiC and Si NCs, respectively. PL intensities are first enhanced and then decreased after introducing P dopants. It is believed that the enhancement is due to passivation of the Si dangling bonds at the surface of Si NCs, while the suppression is ascribed to enhanced Auger recombination and new defects induced by excessive P dopants. Un-doped and P-doped LEDs based on Si NCs/SiC multilayers are fabricated and the performance is enhanced greatly after doping. As fitted, emission peaks near 500 nm and 750 nm can be detected. The current density-voltage properties indicate that the carrier transport process is dominated by FN tunneling mechanisms, while the linear relationship between the integrated EL intensity and injection current illustrates that the EL mechanism is attributed to recombination of electron–hole pairs at Si NCs induced by bipolar injection. After doping, the integrated EL intensities are enhanced by about an order of magnitude, indicating that EQE is greatly improved. |
format | Online Article Text |
id | pubmed-10051929 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-100519292023-03-30 Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode Sun, Teng Li, Dongke Chen, Jiaming Wang, Yuhao Han, Junnan Zhu, Ting Li, Wei Xu, Jun Chen, Kunji Nanomaterials (Basel) Article Developing high-performance Si-based light-emitting devices is the key step to realizing all-Si-based optical telecommunication. Usually, silica (SiO(2)) as the host matrix is used to passivate silicon nanocrystals, and a strong quantum confinement effect can be observed due to the large band offset between Si and SiO(2) (~8.9 eV). Here, for further development of device properties, we fabricate Si nanocrystals (NCs)/SiC multilayers and study the changes in photoelectric properties of the LEDs induced by P dopants. PL peaks centered at 500 nm, 650 nm and 800 nm can be detected, which are attributed to surface states between SiC and Si NCs, amorphous SiC and Si NCs, respectively. PL intensities are first enhanced and then decreased after introducing P dopants. It is believed that the enhancement is due to passivation of the Si dangling bonds at the surface of Si NCs, while the suppression is ascribed to enhanced Auger recombination and new defects induced by excessive P dopants. Un-doped and P-doped LEDs based on Si NCs/SiC multilayers are fabricated and the performance is enhanced greatly after doping. As fitted, emission peaks near 500 nm and 750 nm can be detected. The current density-voltage properties indicate that the carrier transport process is dominated by FN tunneling mechanisms, while the linear relationship between the integrated EL intensity and injection current illustrates that the EL mechanism is attributed to recombination of electron–hole pairs at Si NCs induced by bipolar injection. After doping, the integrated EL intensities are enhanced by about an order of magnitude, indicating that EQE is greatly improved. MDPI 2023-03-20 /pmc/articles/PMC10051929/ /pubmed/36986003 http://dx.doi.org/10.3390/nano13061109 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Sun, Teng Li, Dongke Chen, Jiaming Wang, Yuhao Han, Junnan Zhu, Ting Li, Wei Xu, Jun Chen, Kunji Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode |
title | Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode |
title_full | Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode |
title_fullStr | Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode |
title_full_unstemmed | Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode |
title_short | Enhanced Electroluminescence from a Silicon Nanocrystal/Silicon Carbide Multilayer Light-Emitting Diode |
title_sort | enhanced electroluminescence from a silicon nanocrystal/silicon carbide multilayer light-emitting diode |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10051929/ https://www.ncbi.nlm.nih.gov/pubmed/36986003 http://dx.doi.org/10.3390/nano13061109 |
work_keys_str_mv | AT sunteng enhancedelectroluminescencefromasiliconnanocrystalsiliconcarbidemultilayerlightemittingdiode AT lidongke enhancedelectroluminescencefromasiliconnanocrystalsiliconcarbidemultilayerlightemittingdiode AT chenjiaming enhancedelectroluminescencefromasiliconnanocrystalsiliconcarbidemultilayerlightemittingdiode AT wangyuhao enhancedelectroluminescencefromasiliconnanocrystalsiliconcarbidemultilayerlightemittingdiode AT hanjunnan enhancedelectroluminescencefromasiliconnanocrystalsiliconcarbidemultilayerlightemittingdiode AT zhuting enhancedelectroluminescencefromasiliconnanocrystalsiliconcarbidemultilayerlightemittingdiode AT liwei enhancedelectroluminescencefromasiliconnanocrystalsiliconcarbidemultilayerlightemittingdiode AT xujun enhancedelectroluminescencefromasiliconnanocrystalsiliconcarbidemultilayerlightemittingdiode AT chenkunji enhancedelectroluminescencefromasiliconnanocrystalsiliconcarbidemultilayerlightemittingdiode |