Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs

In this work, we present new evidence of the physical mechanism behind the generation of low-frequency noise with high interface-trap density by measuring the low-frequency noise magnitudes of partially depleted (PD) silicon-on-insulator (SOI) NMOSFETs as a function of irradiation dose. We measure t...

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Detalles Bibliográficos
Autores principales: Liu, Rui, Gao, Linchun, Wang, Juanjuan, Ni, Tao, Li, Yifan, Wang, Runjian, Li, Duoli, Bu, Jianhui, Zeng, Chuanbin, Li, Bo, Luo, Jiajun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10051952/
https://www.ncbi.nlm.nih.gov/pubmed/36985009
http://dx.doi.org/10.3390/mi14030602

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10051952/
https://www.ncbi.nlm.nih.gov/pubmed/36985009
http://dx.doi.org/10.3390/mi14030602

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