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Investigation of Anomalous Degradation Tendency of Low-Frequency Noise in Irradiated SOI-NMOSFETs
In this work, we present new evidence of the physical mechanism behind the generation of low-frequency noise with high interface-trap density by measuring the low-frequency noise magnitudes of partially depleted (PD) silicon-on-insulator (SOI) NMOSFETs as a function of irradiation dose. We measure t...
Autores principales: | Liu, Rui, Gao, Linchun, Wang, Juanjuan, Ni, Tao, Li, Yifan, Wang, Runjian, Li, Duoli, Bu, Jianhui, Zeng, Chuanbin, Li, Bo, Luo, Jiajun |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10051952/ https://www.ncbi.nlm.nih.gov/pubmed/36985009 http://dx.doi.org/10.3390/mi14030602 |
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