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Direct CVD Growth of Transferable 3D Graphene for Sensitive and Flexible SERS Sensor
Three-dimensional (3D) graphene (Gr) has been successfully grown on a patterned sapphire substrate (PSS) with very low mismatch between Gr and the sapphire nanostructure through metal-catalyst-assisted chemical vapor deposition (CVD). However, the transfer of the 3D Gr film without compromising the...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10052069/ https://www.ncbi.nlm.nih.gov/pubmed/36985923 http://dx.doi.org/10.3390/nano13061029 |
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author | Kim, Su Han Jiang, Shiru Lee, Sang-Shin |
author_facet | Kim, Su Han Jiang, Shiru Lee, Sang-Shin |
author_sort | Kim, Su Han |
collection | PubMed |
description | Three-dimensional (3D) graphene (Gr) has been successfully grown on a patterned sapphire substrate (PSS) with very low mismatch between Gr and the sapphire nanostructure through metal-catalyst-assisted chemical vapor deposition (CVD). However, the transfer of the 3D Gr film without compromising the structural integrity of Gr is challenging because of the low etching rate of PSS. For easy and high-quality transfer of 3D Gr, we propose to coat a transfer-support layer (TSL) on PSS before direct CVD growth of 3D Gr. The TSL is directly deposited on PSS by atomic layer deposition without causing any structural changes in the substrate, as verified through atomic force microscopy (AFM). Few-layer 3D Gr is conformally produced along the surface of the TSL/PSS and successfully transferred onto a flexible substrate through wet-etching transfer, as confirmed by scanning electron microscopy, AFM, and Raman spectroscopy studies. We also present the fabrication of a sensitive and flexible surface-enhanced Raman scattering sensor based on 3D Gr on PMMA with high detection performance for low concentrations of R6G (10(−9) M). The proposed transfer method with TSL is expected to broaden the use of 3D graphene in next-generation device applications. |
format | Online Article Text |
id | pubmed-10052069 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-100520692023-03-30 Direct CVD Growth of Transferable 3D Graphene for Sensitive and Flexible SERS Sensor Kim, Su Han Jiang, Shiru Lee, Sang-Shin Nanomaterials (Basel) Article Three-dimensional (3D) graphene (Gr) has been successfully grown on a patterned sapphire substrate (PSS) with very low mismatch between Gr and the sapphire nanostructure through metal-catalyst-assisted chemical vapor deposition (CVD). However, the transfer of the 3D Gr film without compromising the structural integrity of Gr is challenging because of the low etching rate of PSS. For easy and high-quality transfer of 3D Gr, we propose to coat a transfer-support layer (TSL) on PSS before direct CVD growth of 3D Gr. The TSL is directly deposited on PSS by atomic layer deposition without causing any structural changes in the substrate, as verified through atomic force microscopy (AFM). Few-layer 3D Gr is conformally produced along the surface of the TSL/PSS and successfully transferred onto a flexible substrate through wet-etching transfer, as confirmed by scanning electron microscopy, AFM, and Raman spectroscopy studies. We also present the fabrication of a sensitive and flexible surface-enhanced Raman scattering sensor based on 3D Gr on PMMA with high detection performance for low concentrations of R6G (10(−9) M). The proposed transfer method with TSL is expected to broaden the use of 3D graphene in next-generation device applications. MDPI 2023-03-13 /pmc/articles/PMC10052069/ /pubmed/36985923 http://dx.doi.org/10.3390/nano13061029 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Kim, Su Han Jiang, Shiru Lee, Sang-Shin Direct CVD Growth of Transferable 3D Graphene for Sensitive and Flexible SERS Sensor |
title | Direct CVD Growth of Transferable 3D Graphene for Sensitive and Flexible SERS Sensor |
title_full | Direct CVD Growth of Transferable 3D Graphene for Sensitive and Flexible SERS Sensor |
title_fullStr | Direct CVD Growth of Transferable 3D Graphene for Sensitive and Flexible SERS Sensor |
title_full_unstemmed | Direct CVD Growth of Transferable 3D Graphene for Sensitive and Flexible SERS Sensor |
title_short | Direct CVD Growth of Transferable 3D Graphene for Sensitive and Flexible SERS Sensor |
title_sort | direct cvd growth of transferable 3d graphene for sensitive and flexible sers sensor |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10052069/ https://www.ncbi.nlm.nih.gov/pubmed/36985923 http://dx.doi.org/10.3390/nano13061029 |
work_keys_str_mv | AT kimsuhan directcvdgrowthoftransferable3dgrapheneforsensitiveandflexibleserssensor AT jiangshiru directcvdgrowthoftransferable3dgrapheneforsensitiveandflexibleserssensor AT leesangshin directcvdgrowthoftransferable3dgrapheneforsensitiveandflexibleserssensor |