Cargando…

The Effect of C60 and Pentacene Adsorbates on the Electrical Properties of CVD Graphene on SiO(2)

Graphene is an excellent 2D material for vertical organic transistors electrodes due to its weak electrostatic screening and field-tunable work function, in addition to its high conductivity, flexibility and optical transparency. Nevertheless, the interaction between graphene and other carbon-based...

Descripción completa

Detalles Bibliográficos
Autores principales: Oswald, Jacopo, Beretta, Davide, Stiefel, Michael, Furrer, Roman, Vuillaume, Dominique, Calame, Michel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10052095/
https://www.ncbi.nlm.nih.gov/pubmed/36986028
http://dx.doi.org/10.3390/nano13061134
_version_ 1785015067833532416
author Oswald, Jacopo
Beretta, Davide
Stiefel, Michael
Furrer, Roman
Vuillaume, Dominique
Calame, Michel
author_facet Oswald, Jacopo
Beretta, Davide
Stiefel, Michael
Furrer, Roman
Vuillaume, Dominique
Calame, Michel
author_sort Oswald, Jacopo
collection PubMed
description Graphene is an excellent 2D material for vertical organic transistors electrodes due to its weak electrostatic screening and field-tunable work function, in addition to its high conductivity, flexibility and optical transparency. Nevertheless, the interaction between graphene and other carbon-based materials, including small organic molecules, can affect the graphene electrical properties and therefore, the device performances. This work investigates the effects of thermally evaporated C60 (n-type) and Pentacene (p-type) thin films on the in-plane charge transport properties of large area CVD graphene under vacuum. This study was performed on a population of 300 graphene field effect transistors. The output characteristic of the transistors revealed that a C60 thin film adsorbate increased the graphene hole density by (1.65 ± 0.36) × 10(12) cm(−2), whereas a Pentacene thin film increased the graphene electron density by (0.55 ± 0.54) × 10(12) cm(−2). Hence, C60 induced a graphene Fermi energy downshift of about 100 meV, while Pentacene induced a Fermi energy upshift of about 120 meV. In both cases, the increase in charge carriers was accompanied by a reduced charge mobility, which resulted in a larger graphene sheet resistance of about 3 kΩ at the Dirac point. Interestingly, the contact resistance, which varied in the range 200 Ω–1 kΩ, was not significantly affected by the deposition of the organic molecules.
format Online
Article
Text
id pubmed-10052095
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-100520952023-03-30 The Effect of C60 and Pentacene Adsorbates on the Electrical Properties of CVD Graphene on SiO(2) Oswald, Jacopo Beretta, Davide Stiefel, Michael Furrer, Roman Vuillaume, Dominique Calame, Michel Nanomaterials (Basel) Article Graphene is an excellent 2D material for vertical organic transistors electrodes due to its weak electrostatic screening and field-tunable work function, in addition to its high conductivity, flexibility and optical transparency. Nevertheless, the interaction between graphene and other carbon-based materials, including small organic molecules, can affect the graphene electrical properties and therefore, the device performances. This work investigates the effects of thermally evaporated C60 (n-type) and Pentacene (p-type) thin films on the in-plane charge transport properties of large area CVD graphene under vacuum. This study was performed on a population of 300 graphene field effect transistors. The output characteristic of the transistors revealed that a C60 thin film adsorbate increased the graphene hole density by (1.65 ± 0.36) × 10(12) cm(−2), whereas a Pentacene thin film increased the graphene electron density by (0.55 ± 0.54) × 10(12) cm(−2). Hence, C60 induced a graphene Fermi energy downshift of about 100 meV, while Pentacene induced a Fermi energy upshift of about 120 meV. In both cases, the increase in charge carriers was accompanied by a reduced charge mobility, which resulted in a larger graphene sheet resistance of about 3 kΩ at the Dirac point. Interestingly, the contact resistance, which varied in the range 200 Ω–1 kΩ, was not significantly affected by the deposition of the organic molecules. MDPI 2023-03-22 /pmc/articles/PMC10052095/ /pubmed/36986028 http://dx.doi.org/10.3390/nano13061134 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Oswald, Jacopo
Beretta, Davide
Stiefel, Michael
Furrer, Roman
Vuillaume, Dominique
Calame, Michel
The Effect of C60 and Pentacene Adsorbates on the Electrical Properties of CVD Graphene on SiO(2)
title The Effect of C60 and Pentacene Adsorbates on the Electrical Properties of CVD Graphene on SiO(2)
title_full The Effect of C60 and Pentacene Adsorbates on the Electrical Properties of CVD Graphene on SiO(2)
title_fullStr The Effect of C60 and Pentacene Adsorbates on the Electrical Properties of CVD Graphene on SiO(2)
title_full_unstemmed The Effect of C60 and Pentacene Adsorbates on the Electrical Properties of CVD Graphene on SiO(2)
title_short The Effect of C60 and Pentacene Adsorbates on the Electrical Properties of CVD Graphene on SiO(2)
title_sort effect of c60 and pentacene adsorbates on the electrical properties of cvd graphene on sio(2)
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10052095/
https://www.ncbi.nlm.nih.gov/pubmed/36986028
http://dx.doi.org/10.3390/nano13061134
work_keys_str_mv AT oswaldjacopo theeffectofc60andpentaceneadsorbatesontheelectricalpropertiesofcvdgrapheneonsio2
AT berettadavide theeffectofc60andpentaceneadsorbatesontheelectricalpropertiesofcvdgrapheneonsio2
AT stiefelmichael theeffectofc60andpentaceneadsorbatesontheelectricalpropertiesofcvdgrapheneonsio2
AT furrerroman theeffectofc60andpentaceneadsorbatesontheelectricalpropertiesofcvdgrapheneonsio2
AT vuillaumedominique theeffectofc60andpentaceneadsorbatesontheelectricalpropertiesofcvdgrapheneonsio2
AT calamemichel theeffectofc60andpentaceneadsorbatesontheelectricalpropertiesofcvdgrapheneonsio2
AT oswaldjacopo effectofc60andpentaceneadsorbatesontheelectricalpropertiesofcvdgrapheneonsio2
AT berettadavide effectofc60andpentaceneadsorbatesontheelectricalpropertiesofcvdgrapheneonsio2
AT stiefelmichael effectofc60andpentaceneadsorbatesontheelectricalpropertiesofcvdgrapheneonsio2
AT furrerroman effectofc60andpentaceneadsorbatesontheelectricalpropertiesofcvdgrapheneonsio2
AT vuillaumedominique effectofc60andpentaceneadsorbatesontheelectricalpropertiesofcvdgrapheneonsio2
AT calamemichel effectofc60andpentaceneadsorbatesontheelectricalpropertiesofcvdgrapheneonsio2