A Novel Concept of Electron–Hole Enhancement for Superjunction Reverse-Conducting Insulated Gate Bipolar Transistor with Electron-Blocking Layer

A novel snapback-free superjunction reverse-conducting insulated gate bipolar transistor (SJ-RC-IGBT) is proposed and verified by simulation. In the SJ-RC-IGBT, the parasitic P/N/P/N structure as thyristor or Shockley diode demonstrates large conductivity due to an overabundance of carriers for reve...

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Detalles Bibliográficos
Autores principales: Wang, Zhigang, Yang, Chong, Huang, Xiaobing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10053125/
https://www.ncbi.nlm.nih.gov/pubmed/36985053
http://dx.doi.org/10.3390/mi14030646

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10053125/
https://www.ncbi.nlm.nih.gov/pubmed/36985053
http://dx.doi.org/10.3390/mi14030646

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