Fabrication of MoS(2)/C(60) Nanolayer Field-Effect Transistor for Ultrasensitive Detection of miRNA-155

As a major public health issue, early cancer detection is of great significance. A field-effect transistor (FET) based on an MoS(2)/C(60) composite nanolayer as the channel material enhances device performance by adding a light source, allowing the ultrasensitive detection of cancer-related miRNA. In this work, atomic layer deposition (ALD) was used to deposit MoS(2) layer by layer, and C(60) was deposited by an evaporation coater to obtain a composite nanolayer with good surface morphology as the channel material of the FET. Based on the good absorption of C(60) by blue-violet light, a 405 nm laser was selected to irradiate the channel material, improving the function of FET biosensors. A linear detection window from 10 pM to 1 fM with an ultralow detection limit of 5.16 aM for miRNA-155 was achieved.