Cargando…
Fabrication of MoS(2)/C(60) Nanolayer Field-Effect Transistor for Ultrasensitive Detection of miRNA-155
As a major public health issue, early cancer detection is of great significance. A field-effect transistor (FET) based on an MoS(2)/C(60) composite nanolayer as the channel material enhances device performance by adding a light source, allowing the ultrasensitive detection of cancer-related miRNA. I...
Autores principales: | Xing, Youqiang, Wang, Yun, Liu, Lei, Wu, Ze |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10056608/ https://www.ncbi.nlm.nih.gov/pubmed/36985067 http://dx.doi.org/10.3390/mi14030660 |
Ejemplares similares
-
Tabletop Fabrication of High-Performance MoS(2) Field-Effect
Transistors
por: Cho, Ungrae, et al.
Publicado: (2022) -
On current transients in MoS(2) Field Effect Transistors
por: Macucci, Massimo, et al.
Publicado: (2017) -
Fabrication and electrical properties of MoS(2) nanodisc-based back-gated field effect transistors
por: Gu, Weixia, et al.
Publicado: (2014) -
Advances in MoS(2)-Based Field Effect Transistors (FETs)
por: Tong, Xin, et al.
Publicado: (2015) -
Ultrasensitive Photodetection in MoS(2) Avalanche Phototransistors
por: Seo, Junseok, et al.
Publicado: (2021)