Inverse Design of Nanophotonic Devices Using Generative Adversarial Networks with the Sim-NN Model and Self-Attention Mechanism

The inverse design method based on a generative adversarial network (GAN) combined with a simulation neural network (sim-NN) and the self-attention mechanism is proposed in order to improve the efficiency of GAN for designing nanophotonic devices. The sim-NN can guide the model to produce more accurate device designs via the spectrum comparison, whereas the self-attention mechanism can help to extract detailed features of the spectrum by exploring their global interconnections. The nanopatterned power splitter with a 2 μm × 2 μm interference region is designed as an example to obtain the average high transmission (>94%) and low back-reflection (<0.5%) over the broad wavelength range of 1200~1650 nm. As compared to other models, this method can produce larger proportions of high figure-of-merit devices with various desired power-splitting ratios.