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Effect of Gate Bias Stress on the Electrical Characteristics of Ferroelectric Oxide Thin-Film Transistors with Poly(Vinylidenefluoride-Trifluoroethylene)

We investigated the effect of gate bias stress (GBS) on the electrical characteristics of ferroelectric oxide thin-film transistors (FeOxTFTs) with poly(vinylidenefluoride-trifluoroethylene). Generally, conventional oxide thin-film transistors (OxTFTs) with dielectric gate insulators exhibit a small...

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Autores principales: Gu, Bon-Seong, Park, Eun-Seo, Kwon, Jin-Hyuk, Kim, Min-Hoi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10057146/
https://www.ncbi.nlm.nih.gov/pubmed/36984165
http://dx.doi.org/10.3390/ma16062285
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author Gu, Bon-Seong
Park, Eun-Seo
Kwon, Jin-Hyuk
Kim, Min-Hoi
author_facet Gu, Bon-Seong
Park, Eun-Seo
Kwon, Jin-Hyuk
Kim, Min-Hoi
author_sort Gu, Bon-Seong
collection PubMed
description We investigated the effect of gate bias stress (GBS) on the electrical characteristics of ferroelectric oxide thin-film transistors (FeOxTFTs) with poly(vinylidenefluoride-trifluoroethylene). Generally, conventional oxide thin-film transistors (OxTFTs) with dielectric gate insulators exhibit a small negative shift under negative gate bias stress (NBS) and a large positive shift under positive gate bias stress (PBS) in transfer characteristic curves. In contrast, the FeOxTFTs show a small positive shift and a large negative shift under NBS and PBS, respectively. It was confirmed that sufficient changes in the electrical characteristics are obtained by 10 min NBS and PBS. The changed electrical characteristics such as threshold voltage shift, memory on- and memory off-current were maintained for more than 168 h after NBS and 24 h after PBS. It is deduced that, since the dipole alignment of the ferroelectric layer is maximized during GBS, these changes in electrical properties are caused by the remnant dipole moments still being retained during the gate sweep. The memory on- and memory off-current are controlled by GBS and the best on/off current ratio at 10(7) was obtained after NBS. By repeatedly alternating NBS and PBS, the electrical characteristics were reversibly changed. Our results provide the scientific and technological basis for the development of stability and performance optimization of FeOxTFTs.
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spelling pubmed-100571462023-03-30 Effect of Gate Bias Stress on the Electrical Characteristics of Ferroelectric Oxide Thin-Film Transistors with Poly(Vinylidenefluoride-Trifluoroethylene) Gu, Bon-Seong Park, Eun-Seo Kwon, Jin-Hyuk Kim, Min-Hoi Materials (Basel) Communication We investigated the effect of gate bias stress (GBS) on the electrical characteristics of ferroelectric oxide thin-film transistors (FeOxTFTs) with poly(vinylidenefluoride-trifluoroethylene). Generally, conventional oxide thin-film transistors (OxTFTs) with dielectric gate insulators exhibit a small negative shift under negative gate bias stress (NBS) and a large positive shift under positive gate bias stress (PBS) in transfer characteristic curves. In contrast, the FeOxTFTs show a small positive shift and a large negative shift under NBS and PBS, respectively. It was confirmed that sufficient changes in the electrical characteristics are obtained by 10 min NBS and PBS. The changed electrical characteristics such as threshold voltage shift, memory on- and memory off-current were maintained for more than 168 h after NBS and 24 h after PBS. It is deduced that, since the dipole alignment of the ferroelectric layer is maximized during GBS, these changes in electrical properties are caused by the remnant dipole moments still being retained during the gate sweep. The memory on- and memory off-current are controlled by GBS and the best on/off current ratio at 10(7) was obtained after NBS. By repeatedly alternating NBS and PBS, the electrical characteristics were reversibly changed. Our results provide the scientific and technological basis for the development of stability and performance optimization of FeOxTFTs. MDPI 2023-03-12 /pmc/articles/PMC10057146/ /pubmed/36984165 http://dx.doi.org/10.3390/ma16062285 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Communication
Gu, Bon-Seong
Park, Eun-Seo
Kwon, Jin-Hyuk
Kim, Min-Hoi
Effect of Gate Bias Stress on the Electrical Characteristics of Ferroelectric Oxide Thin-Film Transistors with Poly(Vinylidenefluoride-Trifluoroethylene)
title Effect of Gate Bias Stress on the Electrical Characteristics of Ferroelectric Oxide Thin-Film Transistors with Poly(Vinylidenefluoride-Trifluoroethylene)
title_full Effect of Gate Bias Stress on the Electrical Characteristics of Ferroelectric Oxide Thin-Film Transistors with Poly(Vinylidenefluoride-Trifluoroethylene)
title_fullStr Effect of Gate Bias Stress on the Electrical Characteristics of Ferroelectric Oxide Thin-Film Transistors with Poly(Vinylidenefluoride-Trifluoroethylene)
title_full_unstemmed Effect of Gate Bias Stress on the Electrical Characteristics of Ferroelectric Oxide Thin-Film Transistors with Poly(Vinylidenefluoride-Trifluoroethylene)
title_short Effect of Gate Bias Stress on the Electrical Characteristics of Ferroelectric Oxide Thin-Film Transistors with Poly(Vinylidenefluoride-Trifluoroethylene)
title_sort effect of gate bias stress on the electrical characteristics of ferroelectric oxide thin-film transistors with poly(vinylidenefluoride-trifluoroethylene)
topic Communication
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10057146/
https://www.ncbi.nlm.nih.gov/pubmed/36984165
http://dx.doi.org/10.3390/ma16062285
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