Effect of Gate Bias Stress on the Electrical Characteristics of Ferroelectric Oxide Thin-Film Transistors with Poly(Vinylidenefluoride-Trifluoroethylene)

We investigated the effect of gate bias stress (GBS) on the electrical characteristics of ferroelectric oxide thin-film transistors (FeOxTFTs) with poly(vinylidenefluoride-trifluoroethylene). Generally, conventional oxide thin-film transistors (OxTFTs) with dielectric gate insulators exhibit a small...

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Detalles Bibliográficos
Autores principales: Gu, Bon-Seong, Park, Eun-Seo, Kwon, Jin-Hyuk, Kim, Min-Hoi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10057146/
https://www.ncbi.nlm.nih.gov/pubmed/36984165
http://dx.doi.org/10.3390/ma16062285

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10057146/
https://www.ncbi.nlm.nih.gov/pubmed/36984165
http://dx.doi.org/10.3390/ma16062285

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