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Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors

High-sensitivity organic photodetectors (OPDs) with strong near-infrared (NIR) photoresponse have attracted enormous attention due to potential applications in emerging technologies. However, few organic semiconductors have been reported with photoelectric response beyond ~1.1 μm, the detection limi...

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Autores principales: Li, Tengfei, Hu, Gangjian, Tao, Liting, Jiang, Jizhong, Xin, Jingming, Li, Yawen, Ma, Wei, Shen, Liang, Fang, Yanjun, Lin, Yuze
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10058242/
https://www.ncbi.nlm.nih.gov/pubmed/36989368
http://dx.doi.org/10.1126/sciadv.adf6152
_version_ 1785016578332426240
author Li, Tengfei
Hu, Gangjian
Tao, Liting
Jiang, Jizhong
Xin, Jingming
Li, Yawen
Ma, Wei
Shen, Liang
Fang, Yanjun
Lin, Yuze
author_facet Li, Tengfei
Hu, Gangjian
Tao, Liting
Jiang, Jizhong
Xin, Jingming
Li, Yawen
Ma, Wei
Shen, Liang
Fang, Yanjun
Lin, Yuze
author_sort Li, Tengfei
collection PubMed
description High-sensitivity organic photodetectors (OPDs) with strong near-infrared (NIR) photoresponse have attracted enormous attention due to potential applications in emerging technologies. However, few organic semiconductors have been reported with photoelectric response beyond ~1.1 μm, the detection limit of silicon detectors. Here, we extend the absorption of organic small-molecule semiconductors to below silicon bandgap, and even to 0.77 eV, through introducing the newly designed quinoid-terminals with high Mulliken-electronegativity (5.62 eV). The fabricated photodiode-type NIR OPDs exhibit detectivity (D(*)) over 10(12) Jones in 0.41 to 1.2 μm under zero bias with a maximum of 2.9 × 10(12) Jones at 1.02 μm, which is the highest D(*) for reported OPDs in photovoltaic-mode with response spectra beyond 1.1 μm. The high D(*) in 0.9 to 1.2 μm is comparable to those of commercial InGaAs photodetectors, despite the detection limit of our OPDs is shorter than InGaAs (~1.7 μm). A spectrometer prototype with a wide measurable region (0.4 to 1.25 μm) and NIR imaging under 1.2-μm illumination are demonstrated successfully in OPDs.
format Online
Article
Text
id pubmed-10058242
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher American Association for the Advancement of Science
record_format MEDLINE/PubMed
spelling pubmed-100582422023-03-30 Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors Li, Tengfei Hu, Gangjian Tao, Liting Jiang, Jizhong Xin, Jingming Li, Yawen Ma, Wei Shen, Liang Fang, Yanjun Lin, Yuze Sci Adv Physical and Materials Sciences High-sensitivity organic photodetectors (OPDs) with strong near-infrared (NIR) photoresponse have attracted enormous attention due to potential applications in emerging technologies. However, few organic semiconductors have been reported with photoelectric response beyond ~1.1 μm, the detection limit of silicon detectors. Here, we extend the absorption of organic small-molecule semiconductors to below silicon bandgap, and even to 0.77 eV, through introducing the newly designed quinoid-terminals with high Mulliken-electronegativity (5.62 eV). The fabricated photodiode-type NIR OPDs exhibit detectivity (D(*)) over 10(12) Jones in 0.41 to 1.2 μm under zero bias with a maximum of 2.9 × 10(12) Jones at 1.02 μm, which is the highest D(*) for reported OPDs in photovoltaic-mode with response spectra beyond 1.1 μm. The high D(*) in 0.9 to 1.2 μm is comparable to those of commercial InGaAs photodetectors, despite the detection limit of our OPDs is shorter than InGaAs (~1.7 μm). A spectrometer prototype with a wide measurable region (0.4 to 1.25 μm) and NIR imaging under 1.2-μm illumination are demonstrated successfully in OPDs. American Association for the Advancement of Science 2023-03-29 /pmc/articles/PMC10058242/ /pubmed/36989368 http://dx.doi.org/10.1126/sciadv.adf6152 Text en Copyright © 2023 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution License 4.0 (CC BY). https://creativecommons.org/licenses/by/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution license (https://creativecommons.org/licenses/by/4.0/) , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
spellingShingle Physical and Materials Sciences
Li, Tengfei
Hu, Gangjian
Tao, Liting
Jiang, Jizhong
Xin, Jingming
Li, Yawen
Ma, Wei
Shen, Liang
Fang, Yanjun
Lin, Yuze
Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors
title Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors
title_full Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors
title_fullStr Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors
title_full_unstemmed Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors
title_short Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors
title_sort sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors
topic Physical and Materials Sciences
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10058242/
https://www.ncbi.nlm.nih.gov/pubmed/36989368
http://dx.doi.org/10.1126/sciadv.adf6152
work_keys_str_mv AT litengfei sensitivephotodetectionbelowsiliconbandgapusingquinoidcappedorganicsemiconductors
AT hugangjian sensitivephotodetectionbelowsiliconbandgapusingquinoidcappedorganicsemiconductors
AT taoliting sensitivephotodetectionbelowsiliconbandgapusingquinoidcappedorganicsemiconductors
AT jiangjizhong sensitivephotodetectionbelowsiliconbandgapusingquinoidcappedorganicsemiconductors
AT xinjingming sensitivephotodetectionbelowsiliconbandgapusingquinoidcappedorganicsemiconductors
AT liyawen sensitivephotodetectionbelowsiliconbandgapusingquinoidcappedorganicsemiconductors
AT mawei sensitivephotodetectionbelowsiliconbandgapusingquinoidcappedorganicsemiconductors
AT shenliang sensitivephotodetectionbelowsiliconbandgapusingquinoidcappedorganicsemiconductors
AT fangyanjun sensitivephotodetectionbelowsiliconbandgapusingquinoidcappedorganicsemiconductors
AT linyuze sensitivephotodetectionbelowsiliconbandgapusingquinoidcappedorganicsemiconductors