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Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors
High-sensitivity organic photodetectors (OPDs) with strong near-infrared (NIR) photoresponse have attracted enormous attention due to potential applications in emerging technologies. However, few organic semiconductors have been reported with photoelectric response beyond ~1.1 μm, the detection limi...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Association for the Advancement of Science
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10058242/ https://www.ncbi.nlm.nih.gov/pubmed/36989368 http://dx.doi.org/10.1126/sciadv.adf6152 |
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author | Li, Tengfei Hu, Gangjian Tao, Liting Jiang, Jizhong Xin, Jingming Li, Yawen Ma, Wei Shen, Liang Fang, Yanjun Lin, Yuze |
author_facet | Li, Tengfei Hu, Gangjian Tao, Liting Jiang, Jizhong Xin, Jingming Li, Yawen Ma, Wei Shen, Liang Fang, Yanjun Lin, Yuze |
author_sort | Li, Tengfei |
collection | PubMed |
description | High-sensitivity organic photodetectors (OPDs) with strong near-infrared (NIR) photoresponse have attracted enormous attention due to potential applications in emerging technologies. However, few organic semiconductors have been reported with photoelectric response beyond ~1.1 μm, the detection limit of silicon detectors. Here, we extend the absorption of organic small-molecule semiconductors to below silicon bandgap, and even to 0.77 eV, through introducing the newly designed quinoid-terminals with high Mulliken-electronegativity (5.62 eV). The fabricated photodiode-type NIR OPDs exhibit detectivity (D(*)) over 10(12) Jones in 0.41 to 1.2 μm under zero bias with a maximum of 2.9 × 10(12) Jones at 1.02 μm, which is the highest D(*) for reported OPDs in photovoltaic-mode with response spectra beyond 1.1 μm. The high D(*) in 0.9 to 1.2 μm is comparable to those of commercial InGaAs photodetectors, despite the detection limit of our OPDs is shorter than InGaAs (~1.7 μm). A spectrometer prototype with a wide measurable region (0.4 to 1.25 μm) and NIR imaging under 1.2-μm illumination are demonstrated successfully in OPDs. |
format | Online Article Text |
id | pubmed-10058242 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | American Association for the Advancement of Science |
record_format | MEDLINE/PubMed |
spelling | pubmed-100582422023-03-30 Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors Li, Tengfei Hu, Gangjian Tao, Liting Jiang, Jizhong Xin, Jingming Li, Yawen Ma, Wei Shen, Liang Fang, Yanjun Lin, Yuze Sci Adv Physical and Materials Sciences High-sensitivity organic photodetectors (OPDs) with strong near-infrared (NIR) photoresponse have attracted enormous attention due to potential applications in emerging technologies. However, few organic semiconductors have been reported with photoelectric response beyond ~1.1 μm, the detection limit of silicon detectors. Here, we extend the absorption of organic small-molecule semiconductors to below silicon bandgap, and even to 0.77 eV, through introducing the newly designed quinoid-terminals with high Mulliken-electronegativity (5.62 eV). The fabricated photodiode-type NIR OPDs exhibit detectivity (D(*)) over 10(12) Jones in 0.41 to 1.2 μm under zero bias with a maximum of 2.9 × 10(12) Jones at 1.02 μm, which is the highest D(*) for reported OPDs in photovoltaic-mode with response spectra beyond 1.1 μm. The high D(*) in 0.9 to 1.2 μm is comparable to those of commercial InGaAs photodetectors, despite the detection limit of our OPDs is shorter than InGaAs (~1.7 μm). A spectrometer prototype with a wide measurable region (0.4 to 1.25 μm) and NIR imaging under 1.2-μm illumination are demonstrated successfully in OPDs. American Association for the Advancement of Science 2023-03-29 /pmc/articles/PMC10058242/ /pubmed/36989368 http://dx.doi.org/10.1126/sciadv.adf6152 Text en Copyright © 2023 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution License 4.0 (CC BY). https://creativecommons.org/licenses/by/4.0/This is an open-access article distributed under the terms of the Creative Commons Attribution license (https://creativecommons.org/licenses/by/4.0/) , which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Physical and Materials Sciences Li, Tengfei Hu, Gangjian Tao, Liting Jiang, Jizhong Xin, Jingming Li, Yawen Ma, Wei Shen, Liang Fang, Yanjun Lin, Yuze Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors |
title | Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors |
title_full | Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors |
title_fullStr | Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors |
title_full_unstemmed | Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors |
title_short | Sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors |
title_sort | sensitive photodetection below silicon bandgap using quinoid-capped organic semiconductors |
topic | Physical and Materials Sciences |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10058242/ https://www.ncbi.nlm.nih.gov/pubmed/36989368 http://dx.doi.org/10.1126/sciadv.adf6152 |
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