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Synthesis of KH550-Modified Hexagonal Boron Nitride Nanofillers for Improving Thermal Conductivity of Epoxy Nanocomposites

In this work, KH550 (γ-aminopropyl triethoxy silane)-modified hexagonal boron nitride (BN) nanofillers were synthesized through a one-step ball-milling route. Results show that the KH550-modified BN nanofillers synthesized by one-step ball-milling (BM@KH550-BN) exhibit excellent dispersion stability...

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Detalles Bibliográficos
Autores principales: Tang, Bolin, Cao, Miao, Yang, Yaru, Guan, Jipeng, Yao, Yongbo, Yi, Jie, Dong, Jun, Wang, Tianle, Wang, Luxiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10058683/
https://www.ncbi.nlm.nih.gov/pubmed/36987196
http://dx.doi.org/10.3390/polym15061415
Descripción
Sumario:In this work, KH550 (γ-aminopropyl triethoxy silane)-modified hexagonal boron nitride (BN) nanofillers were synthesized through a one-step ball-milling route. Results show that the KH550-modified BN nanofillers synthesized by one-step ball-milling (BM@KH550-BN) exhibit excellent dispersion stability and a high yield of BN nanosheets. Using BM@KH550-BN as fillers for epoxy resin, the thermal conductivity of epoxy nanocomposites increased by 195.7% at 10 wt%, compared to neat epoxy resin. Simultaneously, the storage modulus and glass transition temperature (Tg) of the BM@KH550-BN/epoxy nanocomposite at 10 wt% also increased by 35.6% and 12.4 °C, respectively. The data calculated from the dynamical mechanical analysis show that the BM@KH550-BN nanofillers have a better filler effectiveness and a higher volume fraction of constrained region. The morphology of the fracture surface of the epoxy nanocomposites indicate that the BM@KH550-BN presents a uniform distribution in the epoxy matrix even at 10 wt%. This work guides the convenient preparation of high thermally conductive BN nanofillers, presenting a great application potential in the field of thermally conductive epoxy nanocomposites, which will promote the development of electronic packaging materials.