Well-defined double hysteresis loop in NaNbO(3) antiferroelectrics

Antiferroelectrics (AFEs) are promising candidates in energy-storage capacitors, electrocaloric solid-cooling, and displacement transducers. As an actively studied lead-free antiferroelectric (AFE) material, NaNbO(3) has long suffered from its ferroelectric (FE)-like polarization-electric field (P-E) hysteresis loops with high remnant polarization and large hysteresis. Guided by theoretical calculations, a new strategy of reducing the oxygen octahedral tilting angle is proposed to stabilize the AFE P phase (Space group Pbma) of NaNbO(3). To validate this, we judiciously introduced CaHfO(3) with a low Goldschmidt tolerance factor and AgNbO(3) with a low electronegativity difference into NaNbO(3), the decreased cation displacements and [BO(6)] octahedral tilting angles were confirmed by Synchrotron X-ray powder diffraction and aberration-corrected scanning transmission electron microscopy. Of particular importance is that the 0.75NaNbO(3)−0.20AgNbO(3)−0.05CaHfO(3) ceramic exhibits highly reversible phase transition between the AFE and FE states, showing well-defined double P-E loops and sprout-shaped strain-electric field curves with reduced hysteresis, low remnant polarization, high AFE-FE phase transition field, and zero negative strain. Our work provides a new strategy for designing NaNbO(3)-based AFE material with well-defined double P-E loops, which can also be extended to discover a variety of new lead-free AFEs.