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Synthesizing Metal Oxide Semiconductors on Doped Si/SiO(2) Flexible Fiber Substrates for Wearable Gas Sensing

Traditional metal oxide semiconductor (MOS) gas sensors have limited applications in wearable devices owing to their inflexibility and high-power consumption by substantial heat loss. To overcome these limitations, we prepared doped Si/SiO(2) flexible fibers by a thermal drawing method as substrates...

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Detalles Bibliográficos
Autores principales: Niu, Feng, Zhou, Fugong, Wang, Zhixun, Wei, Lei, Hu, Jie, Dong, Lei, Ma, Yifei, Wang, Mei, Jia, Suotang, Chen, Xuyuan, Tong, Zhaomin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: AAAS 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10065790/
https://www.ncbi.nlm.nih.gov/pubmed/37011282
http://dx.doi.org/10.34133/research.0100
Descripción
Sumario:Traditional metal oxide semiconductor (MOS) gas sensors have limited applications in wearable devices owing to their inflexibility and high-power consumption by substantial heat loss. To overcome these limitations, we prepared doped Si/SiO(2) flexible fibers by a thermal drawing method as substrates to fabricate MOS gas sensors. A methane (CH(4)) gas sensor was demonstrated by subsequently in situ synthesizing Co-doped ZnO nanorods on the fiber surface. The doped Si core acted as the heating source through Joule heating, which conducted heat to the sensing material with reduced heat loss; the SiO(2) cladding was an insulating substrate. The gas sensor was integrated into a miner cloth as a wearable device, and the concentration change of CH(4) was monitored in real time through different colored light-emitting diodes. Our study demonstrated the feasibility of using doped Si/SiO(2) fibers as the substrates to fabricate wearable MOS gas sensors, where the sensors have substantial advantages over tradition sensors in flexibility, heat utilization, etc.