Detector-grade perovskite single-crystal wafers via stress-free gel-confined solution growth targeting high-resolution ionizing radiation detection

Solution-processed organic‒inorganic halide perovskite (OIHP) single crystals (SCs) have demonstrated great potential in ionizing radiation detection due to their outstanding charge transport properties and low-cost preparation. However, the energy resolution (ER) and stability of OIHP detectors still lag far behind those of melt-grown inorganic perovskite and commercial CdZnTe counterparts due to the absence of detector-grade high-quality OIHP SCs. Here, we reveal that the crystallinity and uniformity of OIHP SCs are drastically improved by relieving interfacial stress with a facial gel-confined solution growth strategy, thus enabling the direct preparation of large-area detector-grade SC wafers up to 4 cm with drastically suppressed electronic and ionic defects. The resultant radiation detectors show both a small dark current below 1 nA and excellent baseline stability of 4.0 × 10(−8 )nA cm(−1) s(−1) V(−1), which are rarely realized in OIHP detectors. Consequently, a record high ER of 4.9% at 59.5 keV is achieved under a standard (241)Am gamma-ray source with an ultralow operating bias of 5 V, representing the best gamma-ray spectroscopy performance among all solution-processed semiconductor radiation detectors ever reported.