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Current-driven writing process in antiferromagnetic Mn(2)Au for memory applications
Current pulse driven Néel vector rotation in metallic antiferromagnets is one of the most promising concepts in antiferromagnetic spintronics. We show microscopically that the Néel vector of epitaxial thin films of the prototypical compound Mn(2)Au can be reoriented reversibly in the complete area o...
Autores principales: | , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10070341/ https://www.ncbi.nlm.nih.gov/pubmed/37012272 http://dx.doi.org/10.1038/s41467-023-37569-8 |
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author | Reimers, S. Lytvynenko, Y. Niu, Y. R. Golias, E. Sarpi, B. Veiga, L. S. I. Denneulin, T. Kovács, A. Dunin-Borkowski, R. E. Bläßer, J. Kläui, M. Jourdan, M. |
author_facet | Reimers, S. Lytvynenko, Y. Niu, Y. R. Golias, E. Sarpi, B. Veiga, L. S. I. Denneulin, T. Kovács, A. Dunin-Borkowski, R. E. Bläßer, J. Kläui, M. Jourdan, M. |
author_sort | Reimers, S. |
collection | PubMed |
description | Current pulse driven Néel vector rotation in metallic antiferromagnets is one of the most promising concepts in antiferromagnetic spintronics. We show microscopically that the Néel vector of epitaxial thin films of the prototypical compound Mn(2)Au can be reoriented reversibly in the complete area of cross shaped device structures using single current pulses. The resulting domain pattern with aligned staggered magnetization is long term stable enabling memory applications. We achieve this switching with low heating of ≈20 K, which is promising regarding fast and efficient devices without the need for thermal activation. Current polarity dependent reversible domain wall motion demonstrates a Néel spin-orbit torque acting on the domain walls. |
format | Online Article Text |
id | pubmed-10070341 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-100703412023-04-05 Current-driven writing process in antiferromagnetic Mn(2)Au for memory applications Reimers, S. Lytvynenko, Y. Niu, Y. R. Golias, E. Sarpi, B. Veiga, L. S. I. Denneulin, T. Kovács, A. Dunin-Borkowski, R. E. Bläßer, J. Kläui, M. Jourdan, M. Nat Commun Article Current pulse driven Néel vector rotation in metallic antiferromagnets is one of the most promising concepts in antiferromagnetic spintronics. We show microscopically that the Néel vector of epitaxial thin films of the prototypical compound Mn(2)Au can be reoriented reversibly in the complete area of cross shaped device structures using single current pulses. The resulting domain pattern with aligned staggered magnetization is long term stable enabling memory applications. We achieve this switching with low heating of ≈20 K, which is promising regarding fast and efficient devices without the need for thermal activation. Current polarity dependent reversible domain wall motion demonstrates a Néel spin-orbit torque acting on the domain walls. Nature Publishing Group UK 2023-04-03 /pmc/articles/PMC10070341/ /pubmed/37012272 http://dx.doi.org/10.1038/s41467-023-37569-8 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Reimers, S. Lytvynenko, Y. Niu, Y. R. Golias, E. Sarpi, B. Veiga, L. S. I. Denneulin, T. Kovács, A. Dunin-Borkowski, R. E. Bläßer, J. Kläui, M. Jourdan, M. Current-driven writing process in antiferromagnetic Mn(2)Au for memory applications |
title | Current-driven writing process in antiferromagnetic Mn(2)Au for memory applications |
title_full | Current-driven writing process in antiferromagnetic Mn(2)Au for memory applications |
title_fullStr | Current-driven writing process in antiferromagnetic Mn(2)Au for memory applications |
title_full_unstemmed | Current-driven writing process in antiferromagnetic Mn(2)Au for memory applications |
title_short | Current-driven writing process in antiferromagnetic Mn(2)Au for memory applications |
title_sort | current-driven writing process in antiferromagnetic mn(2)au for memory applications |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10070341/ https://www.ncbi.nlm.nih.gov/pubmed/37012272 http://dx.doi.org/10.1038/s41467-023-37569-8 |
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