Raman Spectroscopic Characterization of Chemical Bonding and Phase Segregation in Tin (Sn)-Incorporated Ga(2)O(3)

[Image: see text] Using detailed Raman scattering analyses, the effect of tin (Sn) incorporation on the crystal structure, chemical bonding/inhomogeneity, and single-phase versus multiphase formation of gallium oxide (Ga(2)O(3)) compounds is reported. The Raman characterization of the Sn-mixed Ga(2)O(3) polycrystalline compounds (0.00 ≤ x ≤ 0.30), which were produced by the high-temperature solid-state synthesis method, indicated that the Sn-induced changes in the chemical bonding and phase segregation were significant. Furthermore, the evolution of Sn–O bonds with increasing Sn concentration (x) was confirmed. While the monoclinic β-Ga(2)O(3) was unperturbed for lower x values, Raman spectra revealed the nucleation of a composite with a distinct SnO(2) secondary phase. A higher Sn content led to the formation of a Ga–Sn–O + SnO(2) mixed phase compound, which was reflected in shifts in the high-frequency stretching and bending of the GaO(4) tetrahedra that structurally formed the β-Ga(2)O(3) phase. Thus, a chemical composition/phase/chemical bonding correlation was established for the Sn-incorporated Ga(2)O(3) compounds.