Cargando…
A dual doping nonvolatile reconfigurable FET
In this work, we propose a dual doping based nonvolatile reconfigurable field effect transistor with source/drain (S/D) charge storage layers (DDN R-FET). It introduces nonvolatile charge storage layers on both source and drain sides as a floating program gate (FPG) instead of a program gate (PG) th...
| Autores principales: | , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2023
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10079829/ https://www.ncbi.nlm.nih.gov/pubmed/37024562 http://dx.doi.org/10.1038/s41598-023-32930-9 |