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Partial Segregation of Bi and Microvoid Formation on a Pure Cu Substrate After Solid–Solid Reactions

With the trend of technology development and carbon reduction, reducing the process temperature to prevent greenhouse effects is of great urgency. The back-end process of semiconductors is increasingly important because of the limitation of Moore’s Law. High-temperature bonding is serious for semico...

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Autores principales: Wang, Yi-Wun, Liang, Hua-Tui, Chang, Kai-Chia, Wu, Guo-Wei, Tseng, Tzu-Ting, Chen, Yi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10081819/
https://www.ncbi.nlm.nih.gov/pubmed/37159816
http://dx.doi.org/10.1007/s11664-023-10390-1
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author Wang, Yi-Wun
Liang, Hua-Tui
Chang, Kai-Chia
Wu, Guo-Wei
Tseng, Tzu-Ting
Chen, Yi
author_facet Wang, Yi-Wun
Liang, Hua-Tui
Chang, Kai-Chia
Wu, Guo-Wei
Tseng, Tzu-Ting
Chen, Yi
author_sort Wang, Yi-Wun
collection PubMed
description With the trend of technology development and carbon reduction, reducing the process temperature to prevent greenhouse effects is of great urgency. The back-end process of semiconductors is increasingly important because of the limitation of Moore’s Law. High-temperature bonding is serious for semiconductor packages, which induces high cost and device damage. One of the critical ways to reduce the process temperature is to adopt low-temperature solders. In this study, we utilize the low-temperature solder Sn58Bi to achieve energy savings and device protection. The interfacial reactions between Sn58Bi and Cu after reflow and aging reactions were investigated. The solubility of Bi in Sn influences the Bi segregation at the interface. Partial Bi segregation, microvoids, and uneven Cu(3)Sn were observed at the interface after aging. There is no doubt that the aforementioned structures are unfavorable for solder joint strength.
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spelling pubmed-100818192023-04-10 Partial Segregation of Bi and Microvoid Formation on a Pure Cu Substrate After Solid–Solid Reactions Wang, Yi-Wun Liang, Hua-Tui Chang, Kai-Chia Wu, Guo-Wei Tseng, Tzu-Ting Chen, Yi J Electron Mater Original Research Article With the trend of technology development and carbon reduction, reducing the process temperature to prevent greenhouse effects is of great urgency. The back-end process of semiconductors is increasingly important because of the limitation of Moore’s Law. High-temperature bonding is serious for semiconductor packages, which induces high cost and device damage. One of the critical ways to reduce the process temperature is to adopt low-temperature solders. In this study, we utilize the low-temperature solder Sn58Bi to achieve energy savings and device protection. The interfacial reactions between Sn58Bi and Cu after reflow and aging reactions were investigated. The solubility of Bi in Sn influences the Bi segregation at the interface. Partial Bi segregation, microvoids, and uneven Cu(3)Sn were observed at the interface after aging. There is no doubt that the aforementioned structures are unfavorable for solder joint strength. Springer US 2023-04-07 2023 /pmc/articles/PMC10081819/ /pubmed/37159816 http://dx.doi.org/10.1007/s11664-023-10390-1 Text en © The Minerals, Metals & Materials Society 2023, Springer Nature or its licensor (e.g. a society or other partner) holds exclusive rights to this article under a publishing agreement with the author(s) or other rightsholder(s); author self-archiving of the accepted manuscript version of this article is solely governed by the terms of such publishing agreement and applicable law. This article is made available via the PMC Open Access Subset for unrestricted research re-use and secondary analysis in any form or by any means with acknowledgement of the original source. These permissions are granted for the duration of the World Health Organization (WHO) declaration of COVID-19 as a global pandemic.
spellingShingle Original Research Article
Wang, Yi-Wun
Liang, Hua-Tui
Chang, Kai-Chia
Wu, Guo-Wei
Tseng, Tzu-Ting
Chen, Yi
Partial Segregation of Bi and Microvoid Formation on a Pure Cu Substrate After Solid–Solid Reactions
title Partial Segregation of Bi and Microvoid Formation on a Pure Cu Substrate After Solid–Solid Reactions
title_full Partial Segregation of Bi and Microvoid Formation on a Pure Cu Substrate After Solid–Solid Reactions
title_fullStr Partial Segregation of Bi and Microvoid Formation on a Pure Cu Substrate After Solid–Solid Reactions
title_full_unstemmed Partial Segregation of Bi and Microvoid Formation on a Pure Cu Substrate After Solid–Solid Reactions
title_short Partial Segregation of Bi and Microvoid Formation on a Pure Cu Substrate After Solid–Solid Reactions
title_sort partial segregation of bi and microvoid formation on a pure cu substrate after solid–solid reactions
topic Original Research Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10081819/
https://www.ncbi.nlm.nih.gov/pubmed/37159816
http://dx.doi.org/10.1007/s11664-023-10390-1
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