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Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework
Metal–organic frameworks (MOFs) are hybrid materials known for their nanoscale pores, which give them high surface areas but generally lead to poor electrical conductivity. Recently, MOFs with high electrical conductivity were established as promising materials for a variety of applications in energ...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10092259/ https://www.ncbi.nlm.nih.gov/pubmed/36183322 http://dx.doi.org/10.1111/nyas.14906 |
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author | Skorupskii, Grigorii Chanteux, Géraldine Le, Khoa N. Stassen, Ivo Hendon, Christopher H. Dincă, Mircea |
author_facet | Skorupskii, Grigorii Chanteux, Géraldine Le, Khoa N. Stassen, Ivo Hendon, Christopher H. Dincă, Mircea |
author_sort | Skorupskii, Grigorii |
collection | PubMed |
description | Metal–organic frameworks (MOFs) are hybrid materials known for their nanoscale pores, which give them high surface areas but generally lead to poor electrical conductivity. Recently, MOFs with high electrical conductivity were established as promising materials for a variety of applications in energy storage and catalysis. Many recent reports investigating the fundamentals of charge transport in these materials focus on the role of the organic ligands. Less consideration, however, is given to the metal ion forming the MOF, which is almost exclusively a late first‐row transition metal. Here, we report a moderately conductive porous MOF based on trivalent gallium and 2,3,6,7,10,11‐hexahydroxytriphenylene. Gallium, a metal that has not been featured in electrically conductive MOFs so far, has a closed‐shell electronic configuration and is present in its trivalent state—in contrast to most conductive MOFs, which are formed by open‐shell, divalent transition metals. Our material, made without using any harmful solvents, displays conductivities on the level of 3 mS/cm and a surface area of 196 m(2)/g, comparable to transition metal analogs. |
format | Online Article Text |
id | pubmed-10092259 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2022 |
publisher | John Wiley and Sons Inc. |
record_format | MEDLINE/PubMed |
spelling | pubmed-100922592023-04-13 Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework Skorupskii, Grigorii Chanteux, Géraldine Le, Khoa N. Stassen, Ivo Hendon, Christopher H. Dincă, Mircea Ann N Y Acad Sci Concise Reports Metal–organic frameworks (MOFs) are hybrid materials known for their nanoscale pores, which give them high surface areas but generally lead to poor electrical conductivity. Recently, MOFs with high electrical conductivity were established as promising materials for a variety of applications in energy storage and catalysis. Many recent reports investigating the fundamentals of charge transport in these materials focus on the role of the organic ligands. Less consideration, however, is given to the metal ion forming the MOF, which is almost exclusively a late first‐row transition metal. Here, we report a moderately conductive porous MOF based on trivalent gallium and 2,3,6,7,10,11‐hexahydroxytriphenylene. Gallium, a metal that has not been featured in electrically conductive MOFs so far, has a closed‐shell electronic configuration and is present in its trivalent state—in contrast to most conductive MOFs, which are formed by open‐shell, divalent transition metals. Our material, made without using any harmful solvents, displays conductivities on the level of 3 mS/cm and a surface area of 196 m(2)/g, comparable to transition metal analogs. John Wiley and Sons Inc. 2022-10-02 2022-12 /pmc/articles/PMC10092259/ /pubmed/36183322 http://dx.doi.org/10.1111/nyas.14906 Text en © 2022 The Authors. Annals of the New York Academy of Sciences published by Wiley Periodicals LLC on behalf of New York Academy of Sciences. https://creativecommons.org/licenses/by-nc-nd/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by-nc-nd/4.0/ (https://creativecommons.org/licenses/by-nc-nd/4.0/) License, which permits use and distribution in any medium, provided the original work is properly cited, the use is non‐commercial and no modifications or adaptations are made. |
spellingShingle | Concise Reports Skorupskii, Grigorii Chanteux, Géraldine Le, Khoa N. Stassen, Ivo Hendon, Christopher H. Dincă, Mircea Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework |
title | Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework |
title_full | Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework |
title_fullStr | Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework |
title_full_unstemmed | Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework |
title_short | Electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework |
title_sort | electrical conductivity through π–π stacking in a two‐dimensional porous gallium catecholate metal–organic framework |
topic | Concise Reports |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10092259/ https://www.ncbi.nlm.nih.gov/pubmed/36183322 http://dx.doi.org/10.1111/nyas.14906 |
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