Study on Tungsten Metallization and Interfacial Bonding of Silicon Nitride High-Temperature Co-Fired Ceramic Substrates

For the first time, Si(3)N(4) HTCC has been prepared using W as the metal phase by high-temperature co-firing (1830 °C/600 KPa/2 h) as a potential substrate candidate in electronic applications. It was discovered that the addition of Si(3)N(4) to the W paste has a significant impact on thermal expansion coefficient matching and dissolution wetting. As the Si(3)N(4) content increased from 0 to 27.23 vol%, the adhesion strength of W increased continuously from 2.83 kgf/mm(2) to 7.04 kgf/mm(2). The interfacial bonding of the Si(3)N(4) ceramic and the conduction layer was discussed. SEM analysis confirmed that the interface between Si(3)N(4) and W exhibited an interlocking structure. TEM, HRTEM and XRD indicated the formation of W(2)C and W(5)Si(3) due to the interface reactions of W with residual carbon and Si(3)N(4), respectively, which contributed to the reactive wetting and good adhesion strength between the interface. Suitable amounts of Si(3)N(4) powder and great interfacial bonding were the main reasons for the tough interfacial matching between the Si(3)N(4) ceramic and the conduction layer.