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Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches

Catalyst-free growth of III-V and III-nitride nanowires (NWs) by the self-induced nucleation mechanism or selective area growth (SAG) on different substrates, including Si, show great promise for monolithic integration of III-V optoelectronics with Si electronic platform. The morphological design of...

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Autor principal: Dubrovskii, Vladimir G.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10096518/
https://www.ncbi.nlm.nih.gov/pubmed/37049346
http://dx.doi.org/10.3390/nano13071253
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author Dubrovskii, Vladimir G.
author_facet Dubrovskii, Vladimir G.
author_sort Dubrovskii, Vladimir G.
collection PubMed
description Catalyst-free growth of III-V and III-nitride nanowires (NWs) by the self-induced nucleation mechanism or selective area growth (SAG) on different substrates, including Si, show great promise for monolithic integration of III-V optoelectronics with Si electronic platform. The morphological design of NW ensembles requires advanced growth modeling, which is much less developed for catalyst-free NWs compared to vapor–liquid–solid (VLS) NWs of the same materials. Herein, we present an empirical approach for modeling simultaneous axial and radial growths of untapered catalyst-free III-V NWs and compare it to the rigorous approach based on the stationary diffusion equations for different populations of group III adatoms. We study in detail the step flow occurring simultaneously on the NW sidewalls and top and derive the general laws governing the evolution of NW length and radius versus the growth parameters. The rigorous approach is reduced to the empirical equations in particular cases. A good correlation of the model with the data on the growth kinetics of SAG GaAs NWs and self-induced GaN NWs obtained by different epitaxy techniques is demonstrated. Overall, the developed theory provides a basis for the growth modeling of catalyst-free NWs and can be further extended to more complex NW morphologies.
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spelling pubmed-100965182023-04-13 Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches Dubrovskii, Vladimir G. Nanomaterials (Basel) Article Catalyst-free growth of III-V and III-nitride nanowires (NWs) by the self-induced nucleation mechanism or selective area growth (SAG) on different substrates, including Si, show great promise for monolithic integration of III-V optoelectronics with Si electronic platform. The morphological design of NW ensembles requires advanced growth modeling, which is much less developed for catalyst-free NWs compared to vapor–liquid–solid (VLS) NWs of the same materials. Herein, we present an empirical approach for modeling simultaneous axial and radial growths of untapered catalyst-free III-V NWs and compare it to the rigorous approach based on the stationary diffusion equations for different populations of group III adatoms. We study in detail the step flow occurring simultaneously on the NW sidewalls and top and derive the general laws governing the evolution of NW length and radius versus the growth parameters. The rigorous approach is reduced to the empirical equations in particular cases. A good correlation of the model with the data on the growth kinetics of SAG GaAs NWs and self-induced GaN NWs obtained by different epitaxy techniques is demonstrated. Overall, the developed theory provides a basis for the growth modeling of catalyst-free NWs and can be further extended to more complex NW morphologies. MDPI 2023-04-01 /pmc/articles/PMC10096518/ /pubmed/37049346 http://dx.doi.org/10.3390/nano13071253 Text en © 2023 by the author. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Dubrovskii, Vladimir G.
Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches
title Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches
title_full Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches
title_fullStr Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches
title_full_unstemmed Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches
title_short Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches
title_sort modeling catalyst-free growth of iii-v nanowires: empirical and rigorous approaches
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10096518/
https://www.ncbi.nlm.nih.gov/pubmed/37049346
http://dx.doi.org/10.3390/nano13071253
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