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Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches
Catalyst-free growth of III-V and III-nitride nanowires (NWs) by the self-induced nucleation mechanism or selective area growth (SAG) on different substrates, including Si, show great promise for monolithic integration of III-V optoelectronics with Si electronic platform. The morphological design of...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10096518/ https://www.ncbi.nlm.nih.gov/pubmed/37049346 http://dx.doi.org/10.3390/nano13071253 |