Cargando…

Modeling Catalyst-Free Growth of III-V Nanowires: Empirical and Rigorous Approaches

Catalyst-free growth of III-V and III-nitride nanowires (NWs) by the self-induced nucleation mechanism or selective area growth (SAG) on different substrates, including Si, show great promise for monolithic integration of III-V optoelectronics with Si electronic platform. The morphological design of...

Descripción completa

Detalles Bibliográficos
Autor principal:	Dubrovskii, Vladimir G.
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10096518/ https://www.ncbi.nlm.nih.gov/pubmed/37049346 http://dx.doi.org/10.3390/nano13071253

Ejemplares similares

Evolution of the Length and Radius of Catalyst-Free III–V Nanowires Grown by Selective Area Epitaxy
por: Dubrovskii, Vladimir G.
Publicado: (2019)

Criterion for Selective Area Growth of III-V Nanowires
por: Dubrovskii, Vladimir G.
Publicado: (2022)

Modeling the Radial Growth of Self-Catalyzed III-V Nanowires
por: Dubrovskii, Vladimir G., et al.
Publicado: (2022)

Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates
por: Dubrovskii, Vladimir G.
Publicado: (2022)

An Overview of Modeling Approaches for Compositional Control in III–V Ternary Nanowires
por: Leshchenko, Egor D., et al.
Publicado: (2023)

Composition of Vapor–Liquid–Solid III–V Ternary Nanowires Based on Group-III Intermix
por: Dubrovskii, Vladimir G.
Publicado: (2023)

Thermodynamics of the Vapor–Liquid–Solid Growth of Ternary III–V Nanowires in the Presence of Silicon
por: Hijazi, Hadi, et al.
Publicado: (2021)

Reconsideration of Nanowire Growth Theory at Low Temperatures
por: Dubrovskii, Vladimir G.
Publicado: (2021)

Theory of MBE Growth of Nanowires on Reflecting Substrates
por: Dubrovskii, Vladimir G.
Publicado: (2022)

Can Nanowires Coalesce?
por: Dubrovskii, Vladimir G.
Publicado: (2023)

Theory of MBE Growth of Nanowires on Adsorbing Substrates: The Role of the Shadowing Effect on the Diffusion Transport
por: Dubrovskii, Vladimir G.
Publicado: (2022)

Dynamics of Monolayer Growth in Vapor–Liquid–Solid GaAs Nanowires Based on Surface Energy Minimization
por: Hijazi, Hadi, et al.
Publicado: (2021)

Fundamental aspects to localize self-catalyzed III-V nanowires on silicon
por: Vukajlovic-Plestina, J., et al.
Publicado: (2019)

Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires
por: Dubrovskii, Vladimir G., et al.
Publicado: (2020)

Kinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfaces
por: Rothman, Amnon, et al.
Publicado: (2021)

Growth Mechanism of SmB(6) Nanowires Synthesized by Chemical Vapor Deposition: Catalyst-Assisted and Catalyst-Free
por: Chu, Yi, et al.
Publicado: (2019)

Growth of Self-Catalyzed InAs/InSb Axial Heterostructured Nanowires: Experiment and Theory
por: Arif, Omer, et al.
Publicado: (2020)

Substrate-independent and catalyst-free synthesis of magnesium nanowires
por: Vijayakumar Sheela, Haritha, et al.
Publicado: (2019)

Growth Mechanism of Self-Catalyzed Group III−V Nanowires
por: Mandl, Bernhard, et al.
Publicado: (2010)

Limits of III–V Nanowire Growth Based on Droplet Dynamics
por: Tornberg, Marcus, et al.
Publicado: (2020)

Growth of epitaxial silicon nanowires on a Si substrate by a metal-catalyst-free process
por: Ishiyama, Takeshi, et al.
Publicado: (2016)

Influence of Te-Doping on Catalyst-Free VS InAs Nanowires
por: Güsken, Nicholas A., et al.
Publicado: (2019)

Lattice-mismatch-free construction of III-V/chalcogenide core-shell heterostructure nanowires
por: Liu, Fengjing, et al.
Publicado: (2023)

Growth of catalyst-free high-quality ZnO nanowires by thermal evaporation under air ambient
por: Liu, Ping, et al.
Publicado: (2012)

Catalyst shape engineering for anisotropic cross-sectioned nanowire growth
por: Calahorra, Yonatan, et al.
Publicado: (2017)

Growth of Inclined GaAs Nanowires by Molecular Beam Epitaxy: Theory and Experiment
por: Zhang, X, et al.
Publicado: (2010)

Kinetics of Catalyst-Free and Position-Controlled Low-Pressure Chemical Vapor Deposition Growth of VO(2) Nanowire Arrays on Nanoimprinted Si Substrates
por: Mutilin, Sergey V., et al.
Publicado: (2022)

Getting rigorous with scientific rigor
por: Hofseth, Lorne J
Publicado: (2018)

Epitaxial growth of crystal phase quantum dots in III–V semiconductor nanowires
por: Lozano, Miguel Sinusia, et al.
Publicado: (2023)

Au-Seeded Growth of Vertical and in-Plane III–V Nanowires on Graphite Substrates
por: Wallentin, Jesper, et al.
Publicado: (2014)

Direct Growth of Light-Emitting III–V Nanowires on Flexible Plastic Substrates
por: Khayrudinov, Vladislav, et al.
Publicado: (2020)

Gold-Free Ternary III–V Antimonide Nanowire Arrays on Silicon: Twin-Free down to the First Bilayer
por: Conesa-Boj, Sònia, et al.
Publicado: (2013)

Stages in the catalyst-free InP nanowire growth on silicon (100) by metal organic chemical vapor deposition
por: Miao, Guoqing, et al.
Publicado: (2012)

Beneficial defects: exploiting the intrinsic polishing-induced wafer roughness for the catalyst-free growth of Ge in-plane nanowires
por: Persichetti, Luca, et al.
Publicado: (2014)

Dealing with great challenges via rigorous and relevant empirical sport management research
por: Koenigstorfer, Joerg
Publicado: (2023)

Nanostripe-Confined Catalyst Formation for Uniform Growth of Ultrathin Silicon Nanowires
por: Cheng, Yinzi, et al.
Publicado: (2022)

Editorial: Scientific Rigor or Rigor Mortis?
por: Bernard, Christophe
Publicado: (2016)

Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers
por: Olszewski, Karol, et al.
Publicado: (2023)

Rigors
Publicado: (1899)

Rigors
por: Burnie, W. Gilchrist
Publicado: (1889)

Cannot write session to /tmp/vufind_sessions/sess_ivnokuskc3nn86kag8bnieamcp