Effect of a-SiC(x)N(y):H Encapsulation on the Stability and Photoluminescence Property of CsPbBr(3) Quantum Dots

The effect of a-SiC(x)N(y):H encapsulation layers, which are prepared using the very-high-frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) technique with SiH(4), CH(4), and NH(3) as the precursors, on the stability and photoluminescence of CsPbBr(3) quantum dots (QDs) were investigate...

Descripción completa

Detalles Bibliográficos
Autores principales: Lin, Zewen, Lin, Zhenxu, Guo, Yanqing, Wu, Haixia, Song, Jie, Zhang, Yi, Zhang, Wenxing, Li, Hongliang, Hou, Dejian, Huang, Rui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10097036/
https://www.ncbi.nlm.nih.gov/pubmed/37049319
http://dx.doi.org/10.3390/nano13071228

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10097036/
https://www.ncbi.nlm.nih.gov/pubmed/37049319
http://dx.doi.org/10.3390/nano13071228

Ejemplares similares