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Plasma Nitridation Effect on β-Ga(2)O(3) Semiconductors

The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the con...

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Detalles Bibliográficos
Autores principales:	Kim, Sunjae, Kim, Minje, Kim, Jihyun, Hwang, Wan Sik
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10097353/ https://www.ncbi.nlm.nih.gov/pubmed/37049293 http://dx.doi.org/10.3390/nano13071199

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