MOSFE-Capacitor Silicon Carbide-Based Hydrogen Gas Sensors

The features of the wide band gap SiC semiconductor use in the capacitive MOSFE sensors’ structure in terms of the hydrogen gas sensitivity effect, the response speed, and the measuring signals’ optimal parameters are studied. Sensors in a high-temperature ceramic housing with the Me/Ta(2)O(5)/SiC(n...

Descripción completa

Detalles Bibliográficos
Autores principales: Litvinov, Artur, Etrekova, Maya, Podlepetsky, Boris, Samotaev, Nikolay, Oblov, Konstantin, Afanasyev, Alexey, Ilyin, Vladimir
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10098966/
https://www.ncbi.nlm.nih.gov/pubmed/37050820
http://dx.doi.org/10.3390/s23073760

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10098966/
https://www.ncbi.nlm.nih.gov/pubmed/37050820
http://dx.doi.org/10.3390/s23073760

Ejemplares similares