High Selectivity Hydrogen Gas Sensor Based on WO(3)/Pd-AlGaN/GaN HEMTs

We investigated the hydrogen gas sensors based on AlGaN/GaN high electron mobility transistors (HEMTs) for high temperature sensing operation. The gate area of the sensor was functionalized using a 10 nm Pd catalyst layer for hydrogen gas sensing. A thin WO(3) layer was deposited on top of the Pd la...

Descripción completa

Detalles Bibliográficos
Autores principales: Nguyen, Van Cuong, Cha, Ho-Young, Kim, Hyungtak
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10099067/
https://www.ncbi.nlm.nih.gov/pubmed/37050525
http://dx.doi.org/10.3390/s23073465

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10099067/
https://www.ncbi.nlm.nih.gov/pubmed/37050525
http://dx.doi.org/10.3390/s23073465

Ejemplares similares