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High Selectivity Hydrogen Gas Sensor Based on WO(3)/Pd-AlGaN/GaN HEMTs
We investigated the hydrogen gas sensors based on AlGaN/GaN high electron mobility transistors (HEMTs) for high temperature sensing operation. The gate area of the sensor was functionalized using a 10 nm Pd catalyst layer for hydrogen gas sensing. A thin WO(3) layer was deposited on top of the Pd la...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10099067/ https://www.ncbi.nlm.nih.gov/pubmed/37050525 http://dx.doi.org/10.3390/s23073465 |