The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO(2)/FTO Memory Device

In this paper, the effect of nitrogen annealing on the resistive switching characteristics of the rutile TiO(2) nanowire-based W/TiO(2)/FTO memory device is analyzed. The W/TiO(2)/FTO memory device exhibits a nonvolatile bipolar resistive switching behavior with a high resistance ratio (R(HRS)/R(LRS...

Descripción completa

Detalles Bibliográficos
Autores principales: Yu, Zhiqiang, Han, Xu, Xu, Jiamin, Chen, Cheng, Qu, Xinru, Liu, Baosheng, Sun, Zijun, Sun, Tangyou
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10099177/
https://www.ncbi.nlm.nih.gov/pubmed/37050540
http://dx.doi.org/10.3390/s23073480

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10099177/
https://www.ncbi.nlm.nih.gov/pubmed/37050540
http://dx.doi.org/10.3390/s23073480

Ejemplares similares