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The Effect of Nitrogen Annealing on the Resistive Switching Characteristics of the W/TiO(2)/FTO Memory Device

In this paper, the effect of nitrogen annealing on the resistive switching characteristics of the rutile TiO(2) nanowire-based W/TiO(2)/FTO memory device is analyzed. The W/TiO(2)/FTO memory device exhibits a nonvolatile bipolar resistive switching behavior with a high resistance ratio (R(HRS)/R(LRS...

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Detalles Bibliográficos
Autores principales:	Yu, Zhiqiang, Han, Xu, Xu, Jiamin, Chen, Cheng, Qu, Xinru, Liu, Baosheng, Sun, Zijun, Sun, Tangyou
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10099177/ https://www.ncbi.nlm.nih.gov/pubmed/37050540 http://dx.doi.org/10.3390/s23073480

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