Hot Carrier Cooling and Trapping in Atomically Thin WS(2) Probed by Three-Pulse Femtosecond Spectroscopy

[Image: see text] Transition metal dichalcogenides (TMDs) have shown outstanding semiconducting properties which make them promising materials for next-generation optoelectronic and electronic devices. These properties are imparted by fundamental carrier–carrier and carrier–phonon interactions that...

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Detalles Bibliográficos
Autores principales: Wang, Tong, Hopper, Thomas R., Mondal, Navendu, Liu, Sihui, Yao, Chengning, Zheng, Xijia, Torrisi, Felice, Bakulin, Artem A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10100566/
https://www.ncbi.nlm.nih.gov/pubmed/36939760
http://dx.doi.org/10.1021/acsnano.2c10479

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10100566/
https://www.ncbi.nlm.nih.gov/pubmed/36939760
http://dx.doi.org/10.1021/acsnano.2c10479

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