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Structural-disorder-driven critical quantum fluctuation and localization in two-dimensional semiconductors

Quantum fluctuations of wavefunctions in disorder-driven quantum phase transitions (QPT) exhibit criticality, as evidenced by their multifractality and power law behavior. However, understanding the metal-insulator transition (MIT) as a continuous QPT in a disordered system has been challenging due...

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Autores principales: Shin, Bong Gyu, Park, Ji-Hoon, Juo, Jz-Yuan, Kong, Jing, Jung, Soon Jung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10121577/
https://www.ncbi.nlm.nih.gov/pubmed/37085496
http://dx.doi.org/10.1038/s41467-023-38024-4
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author Shin, Bong Gyu
Park, Ji-Hoon
Juo, Jz-Yuan
Kong, Jing
Jung, Soon Jung
author_facet Shin, Bong Gyu
Park, Ji-Hoon
Juo, Jz-Yuan
Kong, Jing
Jung, Soon Jung
author_sort Shin, Bong Gyu
collection PubMed
description Quantum fluctuations of wavefunctions in disorder-driven quantum phase transitions (QPT) exhibit criticality, as evidenced by their multifractality and power law behavior. However, understanding the metal-insulator transition (MIT) as a continuous QPT in a disordered system has been challenging due to fundamental issues such as the lack of an apparent order parameter and its dynamical nature. Here, we elucidate the universal mechanism underlying the structural-disorder-driven MIT in 2D semiconductors through autocorrelation and multifractality of quantum fluctuations. The structural disorder causes curvature-induced band gap fluctuations, leading to charge localization and formation of band tails near band edges. As doping level increases, the localization-delocalization transition occurs when states above a critical energy become uniform due to unusual band bending by localized charge. Furthermore, curvature induces local variations in spin-orbit interactions, resulting in non-uniform ferromagnetic domains. Our findings demonstrate that the structural disorder in 2D materials is essential to understanding the intricate phenomena associated with localization-delocalization transition, charge percolation, and spin glass with both topological and magnetic disorders.
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spelling pubmed-101215772023-04-23 Structural-disorder-driven critical quantum fluctuation and localization in two-dimensional semiconductors Shin, Bong Gyu Park, Ji-Hoon Juo, Jz-Yuan Kong, Jing Jung, Soon Jung Nat Commun Article Quantum fluctuations of wavefunctions in disorder-driven quantum phase transitions (QPT) exhibit criticality, as evidenced by their multifractality and power law behavior. However, understanding the metal-insulator transition (MIT) as a continuous QPT in a disordered system has been challenging due to fundamental issues such as the lack of an apparent order parameter and its dynamical nature. Here, we elucidate the universal mechanism underlying the structural-disorder-driven MIT in 2D semiconductors through autocorrelation and multifractality of quantum fluctuations. The structural disorder causes curvature-induced band gap fluctuations, leading to charge localization and formation of band tails near band edges. As doping level increases, the localization-delocalization transition occurs when states above a critical energy become uniform due to unusual band bending by localized charge. Furthermore, curvature induces local variations in spin-orbit interactions, resulting in non-uniform ferromagnetic domains. Our findings demonstrate that the structural disorder in 2D materials is essential to understanding the intricate phenomena associated with localization-delocalization transition, charge percolation, and spin glass with both topological and magnetic disorders. Nature Publishing Group UK 2023-04-21 /pmc/articles/PMC10121577/ /pubmed/37085496 http://dx.doi.org/10.1038/s41467-023-38024-4 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Shin, Bong Gyu
Park, Ji-Hoon
Juo, Jz-Yuan
Kong, Jing
Jung, Soon Jung
Structural-disorder-driven critical quantum fluctuation and localization in two-dimensional semiconductors
title Structural-disorder-driven critical quantum fluctuation and localization in two-dimensional semiconductors
title_full Structural-disorder-driven critical quantum fluctuation and localization in two-dimensional semiconductors
title_fullStr Structural-disorder-driven critical quantum fluctuation and localization in two-dimensional semiconductors
title_full_unstemmed Structural-disorder-driven critical quantum fluctuation and localization in two-dimensional semiconductors
title_short Structural-disorder-driven critical quantum fluctuation and localization in two-dimensional semiconductors
title_sort structural-disorder-driven critical quantum fluctuation and localization in two-dimensional semiconductors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10121577/
https://www.ncbi.nlm.nih.gov/pubmed/37085496
http://dx.doi.org/10.1038/s41467-023-38024-4
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