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Ultralow threshold surface emitting ultraviolet lasers with semiconductor nanowires
Surface-emitting (SE) semiconductor lasers have changed our everyday life in various ways such as communication and sensing. Expanding the operation wavelength of SE semiconductor lasers to shorter ultraviolet (UV) wavelength range further broadens the applications to disinfection, medical diagnosti...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10126006/ https://www.ncbi.nlm.nih.gov/pubmed/37095158 http://dx.doi.org/10.1038/s41598-023-33457-9 |
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author | Vafadar, Mohammad Fazel Zhao, Songrui |
author_facet | Vafadar, Mohammad Fazel Zhao, Songrui |
author_sort | Vafadar, Mohammad Fazel |
collection | PubMed |
description | Surface-emitting (SE) semiconductor lasers have changed our everyday life in various ways such as communication and sensing. Expanding the operation wavelength of SE semiconductor lasers to shorter ultraviolet (UV) wavelength range further broadens the applications to disinfection, medical diagnostics, phototherapy, and so on. Nonetheless, realizing SE lasers in the UV range has remained to be a challenge. Despite of the recent breakthrough in UV SE lasers with aluminum gallium nitride (AlGaN), the electrically injected AlGaN nanowire UV lasers are based on random optical cavities, whereas AlGaN UV vertical-cavity SE lasers (VCSELs) are all through optical pumping and are all with large lasing threshold power densities in the range of several hundred kW/cm(2) to MW/cm(2). Herein, we report ultralow threshold, SE lasing in the UV spectral range with GaN-based epitaxial nanowire photonic crystals. Lasing at 367 nm is measured, with a threshold of only around 7 kW/cm(2) (~ 49 μJ/cm(2)), a factor of 100× reduction compared to the previously reported conventional AlGaN UV VCSELs at similar lasing wavelengths. This is also the first achievement of nanowire photonic crystal SE lasers in the UV range. Further given the excellent electrical doping that has already been established in III-nitride nanowires, this work offers a viable path for the development of the long-sought-after semiconductor UV SE lasers. |
format | Online Article Text |
id | pubmed-10126006 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-101260062023-04-26 Ultralow threshold surface emitting ultraviolet lasers with semiconductor nanowires Vafadar, Mohammad Fazel Zhao, Songrui Sci Rep Article Surface-emitting (SE) semiconductor lasers have changed our everyday life in various ways such as communication and sensing. Expanding the operation wavelength of SE semiconductor lasers to shorter ultraviolet (UV) wavelength range further broadens the applications to disinfection, medical diagnostics, phototherapy, and so on. Nonetheless, realizing SE lasers in the UV range has remained to be a challenge. Despite of the recent breakthrough in UV SE lasers with aluminum gallium nitride (AlGaN), the electrically injected AlGaN nanowire UV lasers are based on random optical cavities, whereas AlGaN UV vertical-cavity SE lasers (VCSELs) are all through optical pumping and are all with large lasing threshold power densities in the range of several hundred kW/cm(2) to MW/cm(2). Herein, we report ultralow threshold, SE lasing in the UV spectral range with GaN-based epitaxial nanowire photonic crystals. Lasing at 367 nm is measured, with a threshold of only around 7 kW/cm(2) (~ 49 μJ/cm(2)), a factor of 100× reduction compared to the previously reported conventional AlGaN UV VCSELs at similar lasing wavelengths. This is also the first achievement of nanowire photonic crystal SE lasers in the UV range. Further given the excellent electrical doping that has already been established in III-nitride nanowires, this work offers a viable path for the development of the long-sought-after semiconductor UV SE lasers. Nature Publishing Group UK 2023-04-24 /pmc/articles/PMC10126006/ /pubmed/37095158 http://dx.doi.org/10.1038/s41598-023-33457-9 Text en © The Author(s) 2023 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) . |
spellingShingle | Article Vafadar, Mohammad Fazel Zhao, Songrui Ultralow threshold surface emitting ultraviolet lasers with semiconductor nanowires |
title | Ultralow threshold surface emitting ultraviolet lasers with semiconductor nanowires |
title_full | Ultralow threshold surface emitting ultraviolet lasers with semiconductor nanowires |
title_fullStr | Ultralow threshold surface emitting ultraviolet lasers with semiconductor nanowires |
title_full_unstemmed | Ultralow threshold surface emitting ultraviolet lasers with semiconductor nanowires |
title_short | Ultralow threshold surface emitting ultraviolet lasers with semiconductor nanowires |
title_sort | ultralow threshold surface emitting ultraviolet lasers with semiconductor nanowires |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10126006/ https://www.ncbi.nlm.nih.gov/pubmed/37095158 http://dx.doi.org/10.1038/s41598-023-33457-9 |
work_keys_str_mv | AT vafadarmohammadfazel ultralowthresholdsurfaceemittingultravioletlaserswithsemiconductornanowires AT zhaosongrui ultralowthresholdsurfaceemittingultravioletlaserswithsemiconductornanowires |