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Ligand‐Triggered Self‐Assembly of Flexible Carbon Dot Nanoribbons for Optoelectronic Memristor Devices and Neuromorphic Computing

Carbon dots (CDs) are widely utilized in sensing, energy storage, and catalysis due to their excellent optical, electrical and semiconducting properties. However, attempts to optimize their optoelectronic performance through high‐order manipulation have met with little success to date. In this study...

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Detalles Bibliográficos
Autores principales: Ai, Lin, Pei, Yifei, Song, Ziqi, Yong, Xue, Song, Haoqiang, Liu, Gongjie, Nie, Mingjun, Waterhouse, Geoffrey I. N., Yan, Xiaobing, Lu, Siyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10131856/
https://www.ncbi.nlm.nih.gov/pubmed/36807578
http://dx.doi.org/10.1002/advs.202207688
Descripción
Sumario:Carbon dots (CDs) are widely utilized in sensing, energy storage, and catalysis due to their excellent optical, electrical and semiconducting properties. However, attempts to optimize their optoelectronic performance through high‐order manipulation have met with little success to date. In this study, through efficient packing of individual CDs in two‐dimensions, the synthesis of flexible CDs ribbons is demonstrated technically. Electron microscopies and molecular dynamics simulations, show the assembly of CDs into ribbons results from the tripartite balance of π–π attractions, hydrogen bonding, and halogen bonding forces provided by the superficial ligands. The obtained ribbons are flexible and show excellent stability against UV irradiation and heating. CDs ribbons offer outstanding performance as active layer material in transparent flexible memristors, with the developed devices providing excellent data storage, retention capabilities, and fast optoelectronic responses. A memristor device with a thickness of 8 µm shows good data retention capability even after 10(4) cycles of bending. Furthermore, the device functions effectively as a neuromorphic computing system with integrated storage and computation capabilities, with the response speed of the device being less than 5.5 ns. These properties create an optoelectronic memristor with rapid Chinese character learning capability. This work lays the foundation for wearable artificial intelligence.